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AUIRFR3710ZTRL PDF预览

AUIRFR3710ZTRL

更新时间： 2024-02-22 22:35:06
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
13页 273K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRFR3710ZTRL 技术参数

生命周期：Obsolete零件包装代码：TO-252AA
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.21Is Samacsys：N
雪崩能效等级（Eas）：200 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：42 A
最大漏源导通电阻：0.018 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：220 A认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR3710ZTRL 数据手册

 浏览型号AUIRFR3710ZTRL的Datasheet PDF文件第2页浏览型号AUIRFR3710ZTRL的Datasheet PDF文件第3页浏览型号AUIRFR3710ZTRL的Datasheet PDF文件第4页浏览型号AUIRFR3710ZTRL的Datasheet PDF文件第5页浏览型号AUIRFR3710ZTRL的Datasheet PDF文件第6页浏览型号AUIRFR3710ZTRL的Datasheet PDF文件第7页 
PD - 97451  
AUTOMOTIVE GRADE  
AUIRFR3710Z  
HEXFET® Power MOSFET  
Features  
D
V(BR)DSS  
100V  
l
l
l
l
l
l
l
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
RDS(on) max.  
18m  
Ω
G
ID (Silicon Limited)  
ID (Package Limited)  
56A  
42A  
S
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a  
175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely  
efficient and reliable device for use in Automotive appli-  
cations and a wide variety of other applications.  
S
G
D-Pak  
AUIRFR3710Z  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
56  
I
I
I
I
@ T = 25°C  
C
D
D
D
Continuous Drain Current, VGS @ 10V  
39  
@ T = 100°C  
A
C
Continuous Drain Current, VGS @ 10V (Package Limited)  
42  
@ T = 25°C  
C
220  
Pulsed Drain Current  
DM  
140  
Power Dissipation  
@T = 25°C  
C
W
W/°C  
V
P
D
0.95  
Linear Derating Factor  
± 20  
Gate-to-Source Voltage  
V
GS  
EAS  
150  
200  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested )  
IAR  
EAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
Operating Junction and  
mJ  
-55 to + 175  
300  
T
T
J
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case )  
°C  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.05  
50  
Units  
Rθ  
JC  
Rθ  
JA  
Rθ  
JA  
Junction-to-Case  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
–––  
°C/W  
–––  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
02/10/2010  
1234567...13

中文翻译

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AUIRFR3710ZTRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR3710Z INFINEON

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