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AUIRFR2905ZSTRR PDF预览

AUIRFR2905ZSTRR

更新时间： 2024-11-26 13:05:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 287K
描述
Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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AUIRFR2905ZSTRR 技术参数

生命周期：Active包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.67其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
雪崩能效等级（Eas）：55 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：55 V
最大漏极电流 (ID)：42 A最大漏源导通电阻：0.0145 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：240 A认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR2905ZSTRR 数据手册

 浏览型号AUIRFR2905ZSTRR的Datasheet PDF文件第2页浏览型号AUIRFR2905ZSTRR的Datasheet PDF文件第3页浏览型号AUIRFR2905ZSTRR的Datasheet PDF文件第4页浏览型号AUIRFR2905ZSTRR的Datasheet PDF文件第5页浏览型号AUIRFR2905ZSTRR的Datasheet PDF文件第6页浏览型号AUIRFR2905ZSTRR的Datasheet PDF文件第7页 
PD - 96320  
AUTOMOTIVE GRADE  
AUIRFR2905Z  
HEXFET® Power MOSFET  
V(BR)DSS  
55V  
11.1m  
14.5m  
59A  
Features  
D
l
l
l
l
l
l
l
AdvancedProcessTechnology  
RDS(on) typ.  
max.  
Ω
Ω
UltraLowOn-Resistance  
175°COperatingTemperature  
FastSwitching  
G
ID (Silicon Limited)  
ID (Package Limited)  
D
RepetitiveAvalancheAlloweduptoTjmax  
Lead-Free,RoHSCompliant  
AutomotiveQualified*  
S
42A  
Description  
SpecificallydesignedforAutomotiveapplications,thisHEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieveextremelylowon-resistancepersiliconarea. Additional  
features of this design are a 175°C junction operating  
temperature, fast switching speed and improved repetitive  
avalancherating.Thesefeaturescombinetomakethisdesign  
anextremelyefficientandreliabledeviceforuseinAutomotive  
applicationsandawidevarietyofotherapplications.  
S
D
G
D-Pak  
AUIRFR2905Z  
G
D
S
AbsoluteMaximumRatings  
Gate  
Drain  
Source  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. Theseare  
stress ratings only; andfunctionaloperationofthedeviceattheseoranyotherconditionbeyondthoseindicatedinthe  
specificationsisnotimplied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
@ T = 25°C  
C
59  
I
I
I
I
D
D
D
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
42  
A
@ T = 100°C  
C
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
42  
@ T = 25°C  
C
240  
DM  
110  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
0.72  
Linear Derating Factor  
Gate-to-Source Voltage  
± 20  
V
GS  
EAS  
AS (Tested )  
55  
Single Pulse Avalanche Energy(Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
82  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
T
T
Operating Junction and  
J
Storage Temperature Range  
°C  
STG  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.38  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
Junction-to-Ambient (PCB mount)  
°C/W  
Junction-to-Ambient  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/20/10  
1234567...13

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