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AUIRFR3504TR PDF预览

AUIRFR3504TR

更新时间： 2024-11-21 01:20:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 233K
描述
HEXFET? Power MOSFET

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中文翻译

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AUIRFR3504TR 数据手册

 浏览型号AUIRFR3504TR的Datasheet PDF文件第2页浏览型号AUIRFR3504TR的Datasheet PDF文件第3页浏览型号AUIRFR3504TR的Datasheet PDF文件第4页浏览型号AUIRFR3504TR的Datasheet PDF文件第5页浏览型号AUIRFR3504TR的Datasheet PDF文件第6页浏览型号AUIRFR3504TR的Datasheet PDF文件第7页 
PD - 97687A  
AUTOMOTIVEGRADE  
AUIRFR3504  
Features  
HEXFET® Power MOSFET  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
l 175°COperatingTemperature  
l Fast Switching  
l FullyAvalancheRated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
D
V(BR)DSS  
40V  
RDS(on) typ.  
max  
ID (Silicon Limited)  
7.8m  
9.2m  
87A  
Ω
Ω
G
S
ID (Package Limited)  
56A  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
D
Description  
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
S
G
D-Pak  
AUIRFR3504  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
87  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
61  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
A
@ T = 100°C  
C
56  
@ T = 25°C  
C
350  
DM  
140  
0.92  
± 20  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
AS (tested )  
240  
480  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
IAR  
See Fig. 12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
300  
Operating Junction and  
T
T
J
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.09  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/30/11  
1234567...13

中文翻译

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AUIRFR3504TR 替代型号

型号 品牌 替代类型 描述 数据表
IRFR4104TRLPBF INFINEON

类似代替

 Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IRFR4104TRRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Me
IRFR3504Z INFINEON

功能相似

 AUTOMOTIVE MOSFET

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