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AUIRFR3504Z

更新时间： 2024-01-17 12:26:20
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 269K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRFR3504Z 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.74
配置：Single最大漏极电流 (Abs) (ID)：42 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：175 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：90 W子类别：FET General Purpose Power
表面贴装：YESBase Number Matches：1

AUIRFR3504Z 数据手册

 浏览型号AUIRFR3504Z的Datasheet PDF文件第2页浏览型号AUIRFR3504Z的Datasheet PDF文件第3页浏览型号AUIRFR3504Z的Datasheet PDF文件第4页浏览型号AUIRFR3504Z的Datasheet PDF文件第5页浏览型号AUIRFR3504Z的Datasheet PDF文件第6页浏览型号AUIRFR3504Z的Datasheet PDF文件第7页 
PD - 97492  
AUIRFR3504Z  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
LowOn-Resistance  
D
S
V(BR)DSS  
40V  
9.0m  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
RDS(on) max.  
Ω
G
ID (Silicon Limited)  
ID (Package Limited)  
77A  
42A  
Description  
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processingtechniquestoachieveextremelylowon-  
resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtempera-  
ture, fast switching speed and improved repetitive  
avalancherating.Thesefeaturescombinetomake  
thisdesignanextremelyefficientandreliabledevice  
foruseinAutomotiveapplicationsandawidevariety  
of other applications.  
S
G
D-Pak  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
77  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
I
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
54  
A
@ T = 25°C  
C
42  
310  
90  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
0.60  
± 20  
W/°C  
V
V
GS  
EAS  
77  
110  
mJ  
Single Pulse Avalanche Energy (Thermally Limited)  
EAS (tested )  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
IAR  
EAR  
See Fig.12a, 12b, 15, 16  
A
Repetitive Avalanche Energy  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
300  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.66  
40  
Units  
Junction-to-Case  
RθJC  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
04/12/2010  
1234567...13

中文翻译

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AUIRFR3504Z 替代型号

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