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AUIRFR2407TRL PDF预览

AUIRFR2407TRL

更新时间： 2024-01-01 08:52:21
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 291K
描述
Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

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AUIRFR2407TRL 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.12其他特性：AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级（Eas）：130 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：75 V
最大漏极电流 (Abs) (ID)：42 A最大漏极电流 (ID)：42 A
最大漏源导通电阻：0.026 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：110 W
最大脉冲漏极电流 (IDM)：170 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR2407TRL 数据手册

 浏览型号AUIRFR2407TRL的Datasheet PDF文件第2页浏览型号AUIRFR2407TRL的Datasheet PDF文件第3页浏览型号AUIRFR2407TRL的Datasheet PDF文件第4页浏览型号AUIRFR2407TRL的Datasheet PDF文件第5页浏览型号AUIRFR2407TRL的Datasheet PDF文件第6页浏览型号AUIRFR2407TRL的Datasheet PDF文件第7页 
PD - 97689A  
AUTOMOTIVE GRADE  
AUIRFR2407  
HEXFET® Power MOSFET  
Features  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
D
V(BR)DSS  
75V  
●
Dynamic dV/dT Rating  
RDS(on) typ.  
max  
ID (Silicon Limited)  
21.8m  
Ω
l 175°COperatingTemperature  
l Fast Switching  
l FullyAvalancheRated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
G
26m  
Ω
S
42A  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
D
Description  
S
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
G
D-Pak  
AUIRFR2407  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
42  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V  
@ T = 25°C  
C
I
I
I
D
D
29  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
A
@ T = 100°C  
C
170  
DM  
110  
0.71  
± 20  
Power Dissipation  
@T = 25°C  
C
W
W/°C  
V
P
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
130  
25  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
11  
5.0  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
1.4  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/30/11  
1234567...12

中文翻译

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AUIRFR2407TRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR2407TR INFINEON

完全替代

 HEXFET® Power MOSFET
IRFR2407TRPBF INFINEON

类似代替

 Advanced Process Technology
IRFR2407PBF INFINEON

类似代替

 HEXFET㈢Power MOSFET

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AUIRFR2905ZSTRL INFINEON

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 		Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2905ZSTRR INFINEON

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 		Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
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