Datasheet > AUIRFR2607ZTRL

AUIRFR2607ZTRL

更新时间： 2024-11-26 14:32:51

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
11页	663K
描述
Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2

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技术参数
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AUIRFR2607ZTRL 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.69	其他特性：	ULTRA LOW RESISTANCE
雪崩能效等级（Eas）：	96 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	75 V
最大漏极电流 (ID)：	42 A	最大漏源导通电阻：	0.022 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	180 A	参考标准：	AEC-Q101
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

AUIRFR2607ZTRL 数据手册

AUTOMOTIVE GRADE

AUIRFR2607Z

Features

V_DSS

75V

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

R_DS(on)

typ.

17.6m

max.

22m

45A

42A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Description

Specifically designed for Automotive applications, this HEXFET^®

Power MOSFET utilizes the latest processing techniques to

achieve extremely low on-resistance per silicon area. Additional

features of this design are a 175°C junction operating temperature,

fast switching speed and improved repetitive avalanche rating .

These features combine to make this design an extremely efficient

and reliable device for use in Automotive applications and a wide

variety of other applications.

D-Pak

AUIRFR2607Z

Gate

Drain

Source

Standard Pack

Form

Tube

Base part number

Package Type

Orderable Part Number

Quantity

3000

AUIRFR2607Z

AUIRFR2607ZTRL

AUIRFR2607Z

D-Pak

Tape and Reel Left

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

45

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

180

110

0.72

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 20

E_AS(Tested)

Single Pulse Avalanche Energy Tested Value 

Avalanche Current 

I_AR

See Fig.15,16, 12a, 12b

E_AR

T_J

Repetitive Avalanche Energy 

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

-55 to + 175

300

T_STG

°C

Thermal Resistance

Symbol

Parameter

Junction-to-Case 

Typ.

–––

Max.

1.38

Units

R_JC

R_JA

Junction-to-Ambient ( PCB Mount) 

Junction-to-Ambient

°C/W

110

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-10-12

12 3 4 5 6 7...11

中文翻译

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与AUIRFR2607ZTRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR2905Z	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR2905Z	KERSEMI	获取价格	Advanced Process Technology
AUIRFR2905ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2905ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2905ZTR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR2905ZTRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3504	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3504TR	INFINEON	获取价格	HEXFET? Power MOSFET
AUIRFR3504TRL	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR3504TRR	INFINEON	获取价格	HEXFET? Power MOSFET

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