PD - 97685
AUTOMOTIVE GRADE
AUIRFR1018E
HEXFET® Power MOSFET
Features
D
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
60V
7.1m
8.4m
79A
●
●
●
●
●
●
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Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
56A
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
thisdesign area175°Cjunctionoperatingtemperature,fastswitching
speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
S
G
D-Pak
AUIRFR1018E
applications.
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
79
ID @ TC = 100°C
ID @ TC = 25°C
IDM
56
A
56
315
PD @TC = 25°C
W
110
Maximum Power Dissipation
0.76
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
± 20
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
88
mJ
A
Avalanche Current
47
Repetitive Avalanche Energy
EAR
mJ
11
21
Peak Diode Recovery
dv/dt
TJ
V/ns
°C
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Thermal Resistance
Symbol
Parameter
Typ.
–––
–––
–––
Max.
1.32
50
Units
Rθ
Junction-to-Case
JC
RθJA
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
RθJA
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/17/11