5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> AUIRFR2307ZTRR
AUIRFR2307ZTRR PDF预览

AUIRFR2307ZTRR

更新时间： 2024-09-28 06:38:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 299K
描述
HEXFET® Power MOSFET

阅读下载

中文翻译

获取价格

AUIRFR2307ZTRR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.12
Is Samacsys：N其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：140 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：75 V
最大漏极电流 (Abs) (ID)：53 A最大漏极电流 (ID)：42 A
最大漏源导通电阻：0.016 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：110 W
最大脉冲漏极电流 (IDM)：210 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFR2307ZTRR 数据手册

 浏览型号AUIRFR2307ZTRR的Datasheet PDF文件第2页浏览型号AUIRFR2307ZTRR的Datasheet PDF文件第3页浏览型号AUIRFR2307ZTRR的Datasheet PDF文件第4页浏览型号AUIRFR2307ZTRR的Datasheet PDF文件第5页浏览型号AUIRFR2307ZTRR的Datasheet PDF文件第6页浏览型号AUIRFR2307ZTRR的Datasheet PDF文件第7页 
PD - 97546  
AUTOMOTIVE GRADE  
AUIRFR2307Z  
Features  
HEXFET® Power MOSFET  
●
●
●
●
●
●
●
Advanced Process Technology  
UltraLowOn-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
D
V(BR)DSS  
75V  
16m  
RDS(on) max.  
ID (Silicon Limited)  
ID (Package Limited)  
Ω
G
53A  
42A  
S
Description  
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
S
G
D-Pak  
AUIRFR2307Z  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
53  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Units  
(Silicon Limited)  
I
I
I
I
@ T = 25°C  
C
D
D
D
38  
A
@ T = 100°C  
C
(Package Limited)  
42  
@ T = 25°C  
C
210  
DM  
110  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
0.70  
Linear Derating Factor  
Gate-to-Source Voltage  
± 20  
V
GS  
EAS  
AS (tested )  
100  
140  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
300  
T
T
Operating Junction and  
J
Storage Temperature Range  
°C  
STG  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
Max.  
1.42  
50  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
Junction-to-Ambient (PCB mount)  
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/23/2010  
1234567...13

中文翻译

下载PDF

AUIRFR2307ZTRR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR2307ZTR INFINEON

完全替代

 HEXFET® Power MOSFET
IRFR2307ZTRLPBF INFINEON

类似代替

 Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Met
IRFR2307ZPBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET

与AUIRFR2307ZTRR相关器件

型号 品牌 获取价格 描述 数据表
AUIRFR2405 INFINEON

获取价格

 		Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2405TR INFINEON

获取价格

 		Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2405TRL INFINEON

获取价格

 		Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2405TRR INFINEON

获取价格

 		Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2407 INFINEON

获取价格

 		Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR2407TR INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRFR2407TRL INFINEON

获取价格

 		Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR2407TRR INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRFR2607Z INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRFR2607Z KERSEMI

获取价格

 		Advanced Process Technology

与AUIRFR2307ZTRR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证