Datasheet > AUIRFR2307Z

AUIRFR2307Z

更新时间： 2024-11-05 12:34:55

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
11页	4111K
描述
Advanced Process Technology

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中文翻译

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数据手册

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AUIRFR2307Z 数据手册

AUIRFR2307Z

Features

●

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_(BR)DSS

75V

16m

R_DS(on)max.

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Ω

53A

42A

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive ava-

lanche rating . These features combine to make this

design an extremely efficient and reliable device for

use in Automotive applications and a wide variety of

other applications.

D-Pak

AUIRFR2307Z

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Units

(Silicon Limited)

@ T = 25°C

@ T = 100°C

(Package Limited)

@ T = 25°C

210

110

@T = 25°C Power Dissipation

W/°C

0.70

Linear Derating Factor

Gate-to-Source Voltage

± 20

E_AS

100

140

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

300

Operating Junction and

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

1.42

Units

R_θJC

R_θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

www.kersemi.com

07/23/2010

12 3 4 5 6 7...11

中文翻译

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与AUIRFR2307Z相关器件

型号	品牌	获取价格	描述	数据表
AUIRFR2307ZTR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR2307ZTRL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR2307ZTRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFR2405	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2405TR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2405TRL	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2405TRR	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2407	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR2407TR	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRFR2407TRL	INFINEON	获取价格	Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Met

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