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AUIRFR2405TR PDF预览

AUIRFR2405TR

更新时间： 2024-09-29 03:12:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 204K
描述
Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRFR2405TR 数据手册

 浏览型号AUIRFR2405TR的Datasheet PDF文件第2页浏览型号AUIRFR2405TR的Datasheet PDF文件第3页浏览型号AUIRFR2405TR的Datasheet PDF文件第4页浏览型号AUIRFR2405TR的Datasheet PDF文件第5页浏览型号AUIRFR2405TR的Datasheet PDF文件第6页浏览型号AUIRFR2405TR的Datasheet PDF文件第7页 
PD - 97688A  
AUTOMOTIVE GRADE  
AUIRFR2405  
HEXFET® Power MOSFET  
Features  
l Advanced Planar Technology  
D
V(BR)DSS  
55V  
●
Dynamic dV/dT Rating  
RDS(on) typ.  
max  
ID (Silicon Limited)  
11.8m  
Ω
l Low On-Resistance  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Repetitive Avalanche Allowed  
up to Tjmax  
16m  
56A  
Ω
G
S
ID (Package Limited)  
30A  
l Lead-Free, RoHS Compliant  
l Automotive Qualified*  
D
Description  
S
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques to  
achieve low on-resistance per silicon area. This ben-  
efit combined with the fast switching speed and rugge-  
dized device design that HEXFET power MOSFETs  
are well known for, provides the designer with an  
extremely efficient and reliable device for use in Auto-  
motive and a wide variety of other applications.  
G
D-Pak  
AUIRFR2405  
G
Gate  
D
S
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
56  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
40  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
A
@ T = 100°C  
C
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
30  
@ T = 25°C  
C
220  
DM  
110  
0.71  
± 20  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
130  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
34  
11  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
5.0  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Thermal Resistance  
Parameter  
Typ.  
Max.  
1.4  
Units  
RθJC  
RθJA  
RθJA  
Junction-to-Case  
–––  
–––  
–––  
Junction-to-Ambient (PCB Mount)  
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/30/11  
1234567...12

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AUIRFR2405TR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR2405TRL INFINEON

完全替代

 Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
IRFR2405 INFINEON

完全替代

 Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=5
IRFR2405TRPBF INFINEON

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AUIRFR2405TRL INFINEON

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 		Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Me
AUIRFR2405TRR INFINEON

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AUIRFR2407TRL INFINEON

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AUIRFR2607Z INFINEON

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AUIRFR2607Z KERSEMI

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AUIRFR2607ZTR INFINEON

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 		HEXFET® Power MOSFET
AUIRFR2607ZTRL INFINEON

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