5秒后页面跳转
捷配首页

Datasheet > AUIRFR2407
AUIRFR2407 PDF预览

AUIRFR2407

更新时间： 2024-11-26 20:08:11
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 554K
描述
Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

阅读下载

中文翻译

获取价格

AUIRFR2407 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：7.49其他特性：AVALANCHE RATED, HIGH RELIABILITY
雪崩能效等级（Eas）：130 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：75 V
最大漏极电流 (Abs) (ID)：42 A最大漏极电流 (ID)：42 A
最大漏源导通电阻：0.026 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：110 W
最大脉冲漏极电流 (IDM)：170 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR2407 数据手册

 浏览型号AUIRFR2407的Datasheet PDF文件第2页浏览型号AUIRFR2407的Datasheet PDF文件第3页浏览型号AUIRFR2407的Datasheet PDF文件第4页浏览型号AUIRFR2407的Datasheet PDF文件第5页浏览型号AUIRFR2407的Datasheet PDF文件第6页浏览型号AUIRFR2407的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFR2407  
HEXFET® Power MOSFET  
Features  
Advanced Planar Technology  
Low On-Resistance  
VDSS  
75V  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
RDS(on)  
typ.  
max.  
21.8m  
26m  
42A  
ID (Silicon Limited)  
D
S
Description  
G
Specifically designed for Automotive applications, this Stripe Planar  
design of HEXFET® Power MOSFETs utilizes the latest  
processing techniques to achieve low on-resistance per silicon  
area. This benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely efficient and  
reliable device for use in Automotive and a wide variety of other  
applications.  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
75  
3000  
AUIRFR2407  
AUIRFR2407TRL  
AUIRFR2407  
D-Pak  
Tape and Reel Left  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
42  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
29  
170  
110  
0.71  
PD @TC = 25°C  
Maximum Power Dissipation  
W
Linear Derating Factor  
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
130  
IAR  
Avalanche Current   
25  
11  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy   
Pead Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case   
Typ.  
–––  
–––  
–––  
Max.  
1.4  
Units  
RJC  
RJA  
RJA  
Junction-to-Ambient ( PCB Mount)   
Junction-to-Ambient  
50  
°C/W  
110  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-23  
1234567...10

中文翻译

下载PDF

AUIRFR2407 替代型号

型号 品牌 替代类型 描述 数据表
IRFR2407TRLPBF INFINEON

类似代替

 Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Met
IRFR2407TRPBF INFINEON

类似代替

 Advanced Process Technology
IRFR2407PBF INFINEON

类似代替

 HEXFET㈢Power MOSFET

与AUIRFR2407相关器件

型号 品牌 获取价格 描述 数据表
AUIRFR2407TR INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRFR2407TRL INFINEON

获取价格

 		Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR2407TRR INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRFR2607Z INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRFR2607Z KERSEMI

获取价格

 		Advanced Process Technology
AUIRFR2607ZTR INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRFR2607ZTRL INFINEON

获取价格

 		Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR2905Z INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRFR2905Z KERSEMI

获取价格

 		Advanced Process Technology
AUIRFR2905ZSTRL INFINEON

获取价格

 		Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me

与AUIRFR2407相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证