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AUIRFR120ZTRL PDF预览

AUIRFR120ZTRL

更新时间： 2024-09-28 20:06:15
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 692K
描述
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

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AUIRFR120ZTRL 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：DPAK-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.14其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：20 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：8.7 A最大漏极电流 (ID)：8.7 A
最大漏源导通电阻：0.19 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：35 W
最大脉冲漏极电流 (IDM)：35 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFR120ZTRL 数据手册

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AUIRFR120Z  
AUIRFU120Z  
AUTOMOTIVE GRADE  
Features  
VDSS  
100V  
150m  
190m  
8.7A  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
RDS(on)  
typ.  
max.  
ID  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
D
S
S
Description  
D
G
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to  
achieve extremely low on-resistance per silicon area. Additional  
features of this design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive avalanche rating .  
These features combine to make this design an extremely efficient  
and reliable device for use in Automotive applications and a wide  
variety of other applications.  
G
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
AUIRFU120Z  
Package Type  
I-Pak  
Orderable Part Number  
Quantity  
75  
75  
3000  
AUIRFU120Z  
AUIRFR120Z  
AUIRFR120ZTRL  
Tube  
Tape and Reel Left  
AUIRFR120Z  
D-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
8.7  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
6.1  
35  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
35  
W
W/°C  
V
0.23  
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
18  
mJ  
EAS (Tested)  
Single Pulse Avalanche Energy Tested Value   
Avalanche Current   
20  
IAR  
See Fig.15,16, 12a, 12b  
A
EAR  
TJ  
Repetitive Avalanche Energy   
mJ  
Operating Junction and  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
-55 to + 175  
300  
TSTG  
°C  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
4.28  
50  
Units  
RJC  
RJA  
RJA  
Junction-to-Ambient ( PCB Mount)   
Junction-to-Ambient  
°C/W  
110  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2017-10-05  
1234567...12

中文翻译

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AUIRFR120ZTRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRFR120Z INFINEON

完全替代

 Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Me
IRFR120ZPBF INFINEON

完全替代

 AUTOMOTIVE MOSFET
IRFR120ZTRPBF INFINEON

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