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AUIRFP4004

更新时间： 2024-11-05 12:52:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 281K
描述
Specifically designed for Automotive applications

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中文翻译

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AUIRFP4004 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.71其他特性：ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：290 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：195 A最大漏极电流 (ID)：195 A
最大漏源导通电阻：0.0017 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-247ACJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：380 W
最大脉冲漏极电流 (IDM)：1390 A子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFP4004 数据手册

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PD - 96407A  
AUTOMOTIVE GRADE  
AUIRFP4004  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
LowOn-Resistance  
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
D
S
40V  
1.35mΩ  
1.70m  
350A  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
Ω
G
ID (Package Limited)  
195A  
Description  
D
Specifically designed for Automotive applications, this  
HEXFET® PowerMOSFETutilizesthelatestprocessing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a  
175°C junction operating temperature, fast switching  
speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely  
efficient and reliable device for use in Automotive  
applications and a wide variety of other applications.  
S
D
G
TO-247AC  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
350  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
250  
A
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
195  
1390  
PD @TC = 25°C  
W
380  
Maximum Power Dissipation  
2.5  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
290  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
mJ  
A
Avalanche Current  
See Fig. 14, 15, 21a, 21b  
Repetitive Avalanche Energy  
EAR  
mJ  
2.0  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.40  
–––  
40  
Units  
Rθ  
Junction-to-Case  
JC  
Rθ  
RθJA  
0.24  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
CS  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
09/06/11  
1234567...11

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