5秒后页面跳转
捷配首页

Datasheet > AUIRFP1405
AUIRFP1405 PDF预览

AUIRFP1405

更新时间： 2024-11-05 14:32:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 239K
描述
Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3

阅读下载

中文翻译

获取价格

AUIRFP1405 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.2
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：530 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：95 A
最大漏极电流 (ID)：95 A最大漏源导通电阻：0.0053 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：310 W最大脉冲漏极电流 (IDM)：640 A
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFP1405 数据手册

 浏览型号AUIRFP1405的Datasheet PDF文件第2页浏览型号AUIRFP1405的Datasheet PDF文件第3页浏览型号AUIRFP1405的Datasheet PDF文件第4页浏览型号AUIRFP1405的Datasheet PDF文件第5页浏览型号AUIRFP1405的Datasheet PDF文件第6页浏览型号AUIRFP1405的Datasheet PDF文件第7页 
PD - 97724  
AUTOMOTIVE GRADE  
AUIRFP1405  
Features  
l AdvancedPlanarTechnology  
HEXFET® Power MOSFET  
l LowOn-Resistance  
D
S
V(BR)DSS  
55V  
l DynamicdV/dTRating  
l 175°COperatingTemperature  
l Fast Switching  
l FullyAvalancheRated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
RDS(on) typ.  
max  
ID (Silicon Limited)  
4.2m  
5.3m  
160A  
Ω
Ω
G
ID (Package Limited)  
95A  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
D
Description  
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETsutilizesthelatestprocessingtechniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed  
and ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the de-  
signer with an extremely efficient and reliable  
device for use in Automotive and a wide variety of  
other applications.  
S
D
G
TO-247AC  
AUIRFP1405  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
160  
110  
95  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
A
@ T = 100°C  
C
@ T = 25°C  
C
640  
DM  
310  
2.0  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
± 20  
V
GS  
EAS  
AS (tested )  
530  
1060  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
IAR  
See Fig. 12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
T
T
Operating Junction and  
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.49  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
09/02/11  
1234567...12

中文翻译

下载PDF

AUIRFP1405 替代型号

型号 品牌 替代类型 描述 数据表
IRFP1405PBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET
IRFP1405 INFINEON

类似代替

 AUTOMOTIVE MOSFET

与AUIRFP1405相关器件

型号 品牌 获取价格 描述 数据表
AUIRFP2602 INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFP2907 INFINEON

获取价格

 		Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
AUIRFP2907Z INFINEON

获取价格

 		HEXFET Power MOSFET
AUIRFP4004 INFINEON

获取价格

 		Specifically designed for Automotive applications
AUIRFP4110 INFINEON

获取价格

 		Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon,
AUIRFP4409 INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFP4568 INFINEON

获取价格

 		Power Field-Effect Transistor
AUIRFR024N INFINEON

获取价格

 		Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met
AUIRFR024NTR INFINEON

获取价格

 		Advanced Planar Technology
AUIRFR024NTRL INFINEON

获取价格

 		Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Met

与AUIRFP1405相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证