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AUIRFP1405

更新时间： 2024-02-29 21:31:44
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 239K
描述
Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3

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AUIRFP1405 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：TO-247AC包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.28
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：530 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：95 A
最大漏极电流 (ID)：95 A最大漏源导通电阻：0.0053 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：250
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：310 W
最大脉冲漏极电流 (IDM)：640 A子类别：FET General Purpose Power
表面贴装：NO端子面层：MATTE TIN OVER NICKEL
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICON

AUIRFP1405 数据手册

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PD - 97724  
AUTOMOTIVE GRADE  
AUIRFP1405  
Features  
l AdvancedPlanarTechnology  
HEXFET® Power MOSFET  
l LowOn-Resistance  
D
S
V(BR)DSS  
55V  
l DynamicdV/dTRating  
l 175°COperatingTemperature  
l Fast Switching  
l FullyAvalancheRated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
RDS(on) typ.  
max  
ID (Silicon Limited)  
4.2m  
5.3m  
160A  
Ω
Ω
G
ID (Package Limited)  
95A  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
D
Description  
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETsutilizesthelatestprocessingtechniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed  
and ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the de-  
signer with an extremely efficient and reliable  
device for use in Automotive and a wide variety of  
other applications.  
S
D
G
TO-247AC  
AUIRFP1405  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
160  
110  
95  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
A
@ T = 100°C  
C
@ T = 25°C  
C
640  
DM  
310  
2.0  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
± 20  
V
GS  
EAS  
AS (tested )  
530  
1060  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
IAR  
See Fig. 12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
T
T
Operating Junction and  
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.49  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
09/02/11  
1234567...12

中文翻译

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AUIRFP1405 替代型号

型号 品牌 替代类型 描述 数据表
IRFP1405PBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET
IRFP1405 INFINEON

类似代替

 AUTOMOTIVE MOSFET

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