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AUIRFP064N

更新时间： 2024-01-29 06:45:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 260K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

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AUIRFP064N 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：7.67
其他特性：AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级（Eas）：480 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：110 A
最大漏极电流 (ID)：110 A最大漏源导通电阻：0.008 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：200 W最大脉冲漏极电流 (IDM)：390 A
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFP064N 数据手册

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PD - 96375  
AUTOMOTIVE GRADE  
AUIRFP064N  
HEXFET® Power MOSFET  
Features  
AdvancedPlanarTechnology  
D
LowOn-Resistance  
V(BR)DSS  
RDS(on) max.  
ID  
55V  
0.008  
110A  
Dynamic dV/dT Rating  
175°COperatingTemperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Ω
G
S
Lead-Free,RoHSCompliant  
Automotive Qualified *  
D
Description  
Specifically designed for Automotive applications, this  
Cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined with  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliable device for use in Automotive and a wide variety  
of other applications.  
S
D
G
TO-247AC  
G
D
S
G a te  
D ra in  
S o u rce  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
devicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillair  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
110  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
80  
A
390  
PD @TC = 25°C  
200  
Power Dissipation  
W
W/°C  
V
1.3  
Linear Derating Factor  
VGS  
EAS  
IAR  
± 20  
480  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
59  
EAR  
dv/dt  
TJ  
20  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.75  
–––  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.24  
–––  
°C/W  
40  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/22/11  
1234567...11

中文翻译

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AUIRFP064N 替代型号

型号 品牌 替代类型 描述 数据表
IRFP064NPBF INFINEON

类似代替

 HEXFET Power MOSFET
IRFP064N INFINEON

功能相似

 Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=1
IRFP064 INFINEON

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 Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)

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