Datasheet > AUIRFN7110

AUIRFN7110

更新时间： 2024-09-28 14:54:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	536K
描述
100V 单个 N 通道 HEXFET Power MOSFET, 采用 PQFN 5 x 6 E 封装

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AUIRFN7110 数据手册

AUTOMOTIVE GRADE

AUIRFN7110

HEXFET^®POWER MOSFET

Features

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

V_DSS

100V

11.5m

14.5m

58A

R_DS(on)typ.

max

I_{D (Silicon Limited)}

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These features

combine to make this product an extremely efficient and

reliable device for use in Automotive and wide variety of

other applications.

Applications

PQFN 5X6 mm

 Injection

 DC-DC Converter

 Automotive Lighting

 E-Horn

Gate

Drain

Source

 48V Automotive Systems

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Tape and Reel

Quantity

AUIRFN7110

PQFN 5mm x 6mm

AUIRFN7110TR

4000

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Pulsed Drain Current 

Power Dissipation 

Power Dissipation

Linear Derating Factor 

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

Avalanche Current 

Repetitive Avalanche Energy 

Operating Junction and

Max.

58

232

4.3

125

0.029

± 20

133

Units

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

W/°C

V_GS

E_AS

I_AR

E_AR

T_J

See Fig. 13, 14, 17a, 17b

-55 to + 175

°C

T_STG

Storage Temperature Range

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Submit Datasheet Feedback

July 23, 2015

12 3 4 5 6 7...11

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AUIRFN8403	INFINEON	获取价格	汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 PQ
AUIRFN8403TR	INFINEON	获取价格	MOSFET N-CH 40V 95A 8PQFN
AUIRFN8405	INFINEON	获取价格	Advanced Process Technology
AUIRFN8405TR	INFINEON	获取价格	Advanced Process Technology
AUIRFN8458	INFINEON	获取价格	Advanced Process Technology
AUIRFN8458TR	INFINEON	获取价格	Advanced Process Technology
AUIRFN8459	INFINEON	获取价格	40V 双 N 通道 HEXFET Power MOSFET，采用 PQFN 5 x 6
AUIRFN8459TR	INFINEON	获取价格	Power Field-Effect Transistor

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