Datasheet > AUIRFN8405TR

AUIRFN8405TR

更新时间： 2024-11-06 01:18:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	573K
描述
Advanced Process Technology

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中文翻译

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AUIRFN8405TR 数据手册

AUTOMOTIVE GRADE

AUIRFN8405

Features

HEXFET^®POWER MOSFET

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

V_DSS

40V

1.6m

2.0m

187A

95A

R_DS(on)typ.

max

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These features

combine to make this product an extremely efficient and

reliable device for use in Automotive and wide variety of

other applications.

PQFN 5X6 mm

Applications

 Electric Power Steering (EPS)

 Battery Switch

Gate

Drain

Source

 Start/Stop Micro Hybrid

 Heavy Loads

 DC-DC Converter

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Tape and Reel

Quantity

AUIRFN8405

PQFN 5mm x 6mm

4000

AUIRFN8405TR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

Max.

187

132

670

3.3

Units

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C= 25°C

I_DM

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation

136

Linear Derating Factor

Gate-to-Source Voltage

0.022

± 20

W/°C

V_GS

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

Avalanche Characteristics

E_{AS(Thermally Limited)}

Single Pulse Avalanche Energy 

190

365

E_AS(Tested)

Single Pulse Avalanche Energy

Avalanche Current 

I_AR

See Fig. 14, 15, 22a, 22b

E_AR

Repetitive Avalanche Energy

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Submit Datasheet Feedback

November 3, 2014

12 3 4 5 6 7...11

中文翻译

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与AUIRFN8405TR相关器件

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AUIRFN8458	INFINEON	获取价格	Advanced Process Technology
AUIRFN8458TR	INFINEON	获取价格	Advanced Process Technology
AUIRFN8459	INFINEON	获取价格	40V 双 N 通道 HEXFET Power MOSFET，采用 PQFN 5 x 6
AUIRFN8459TR	INFINEON	获取价格	Power Field-Effect Transistor
AUIRFP064N	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance
AUIRFP1405	INFINEON	获取价格	Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Me
AUIRFP2602	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFP2907	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Me
AUIRFP2907Z	INFINEON	获取价格	HEXFET Power MOSFET
AUIRFP4004	INFINEON	获取价格	Specifically designed for Automotive applications

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