AUTOMOTIVE GRADE
AUIRFN8401
Features
HEXFET® POWER MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
40V
3.6m
4.6m
84A
RDS(on) typ.
max
ID (Silicon Limited)
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
PQFN 5X6 mm
G
D
S
Applications
Motor Control
Reverse Battery Protection
Heavy Loads
Gate
Drain
Source
Base Part Number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4000
AUIRFN8401
PQFN 5mm x 6mm
AUIRFN8401TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Max.
84
Units
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
A
59
336
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
Power Dissipation
4.2
63
W
Linear Derating Factor
Gate-to-Source Voltage
0.028
± 20
W/°C
V
VGS
EAS
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
69
mJ
EAS (Tested)
93
A
IAR
See Fig. 14, 15, 22a, 22b
mJ
EAR
Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2014 International Rectifier
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August 14, 2014