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AUIRFN8401 PDF预览

AUIRFN8401

更新时间: 2024-11-10 01:18:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 617K
描述
Advanced Process Technology

AUIRFN8401 数据手册

 浏览型号AUIRFN8401的Datasheet PDF文件第2页浏览型号AUIRFN8401的Datasheet PDF文件第3页浏览型号AUIRFN8401的Datasheet PDF文件第4页浏览型号AUIRFN8401的Datasheet PDF文件第5页浏览型号AUIRFN8401的Datasheet PDF文件第6页浏览型号AUIRFN8401的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFN8401  
Features  
HEXFET® POWER MOSFET  
 Advanced Process Technology  
 Ultra Low On-Resistance  
 175°C Operating Temperature  
 Fast Switching  
 Repetitive Avalanche Allowed up to Tjmax  
 Lead-Free, RoHS Compliant  
 Automotive Qualified *  
VDSS  
40V  
3.6m  
4.6m  
84A  
RDS(on) typ.  
max  
ID (Silicon Limited)  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniques to achieve extremely low on-resistance per  
silicon area. Additional features of this design are a 175°C  
junction operating temperature, fast switching speed and  
improved repetitive avalanche rating. These features  
combine to make this product an extremely efficient and  
reliable device for use in Automotive and wide variety of  
other applications.  
PQFN 5X6 mm  
G
D
S
Applications  
 Motor Control  
 Reverse Battery Protection  
 Heavy Loads  
Gate  
Drain  
Source  
Base Part Number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Tape and Reel  
Quantity  
4000  
AUIRFN8401  
PQFN 5mm x 6mm  
AUIRFN8401TR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
Max.  
84  
Units  
ID @ TC(Bottom) = 25°C  
ID @ TC(Bottom) = 100°C  
IDM  
A
59  
336  
PD @TA = 25°C  
PD @TC(Bottom) = 25°C  
Power Dissipation  
Power Dissipation  
4.2  
63  
W
Linear Derating Factor  
Gate-to-Source Voltage  
0.028  
± 20  
W/°C  
V
VGS  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)   
Single Pulse Avalanche Energy   
Avalanche Current   
69  
mJ  
EAS (Tested)  
93  
A
IAR  
See Fig. 14, 15, 22a, 22b  
mJ  
EAR  
Repetitive Avalanche Energy   
TJ  
TSTG  
Operating Junction and  
Storage Temperature Range  
-55 to + 175  
°C  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
August 14, 2014  

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