Datasheet > AUIRFN8401

AUIRFN8401

更新时间： 2024-01-06 02:52:20

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	617K
描述
Advanced Process Technology

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中文翻译

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数据手册

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AUIRFN8401 数据手册

AUTOMOTIVE GRADE

AUIRFN8401

Features

HEXFET^®POWER MOSFET

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

V_DSS

40V

3.6m

4.6m

84A

R_DS(on)typ.

max

I_{D (Silicon Limited)}

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These features

combine to make this product an extremely efficient and

reliable device for use in Automotive and wide variety of

other applications.

PQFN 5X6 mm

Applications

 Motor Control

 Reverse Battery Protection

 Heavy Loads

Gate

Drain

Source

Base Part Number

Package Type

Standard Pack

Orderable Part Number

Form

Tape and Reel

Quantity

4000

AUIRFN8401

PQFN 5mm x 6mm

AUIRFN8401TR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Pulsed Drain Current 

Max.

Units

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

336

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation

4.2

Linear Derating Factor

Gate-to-Source Voltage

0.028

± 20

W/°C

V_GS

E_AS

Single Pulse Avalanche Energy (Thermally Limited) 

Single Pulse Avalanche Energy 

Avalanche Current 

E_AS(Tested)

I_AR

See Fig. 14, 15, 22a, 22b

E_AR

Repetitive Avalanche Energy 

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Submit Datasheet Feedback

August 14, 2014

12 3 4 5 6 7...11

中文翻译

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与AUIRFN8401相关器件

型号	品牌	获取价格	描述	数据表
AUIRFN8401TR	INFINEON	获取价格	Advanced Process Technology
AUIRFN8403	INFINEON	获取价格	汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 PQ
AUIRFN8403TR	INFINEON	获取价格	MOSFET N-CH 40V 95A 8PQFN
AUIRFN8405	INFINEON	获取价格	Advanced Process Technology
AUIRFN8405TR	INFINEON	获取价格	Advanced Process Technology
AUIRFN8458	INFINEON	获取价格	Advanced Process Technology
AUIRFN8458TR	INFINEON	获取价格	Advanced Process Technology
AUIRFN8459	INFINEON	获取价格	40V 双 N 通道 HEXFET Power MOSFET，采用 PQFN 5 x 6
AUIRFN8459TR	INFINEON	获取价格	Power Field-Effect Transistor
AUIRFP064N	INFINEON	获取价格	Advanced Planar Technology Low On-Resistance

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