Datasheet > AUIRFN7107

AUIRFN7107

更新时间： 2024-11-19 01:18:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	263K
描述
Advanced Process Technology

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中文翻译

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AUIRFN7107 数据手册

AUTOMOTIVE GRADE

AUIRFN7107

Features

HEXFET^®POWER MOSFET

 Advanced Process Technology

 Ultra Low On-Resistance

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

V_DSS

75V

R_DS(on)max

(@V_GS= 10V)

8.5m

Q_{G (typical)}

51nC

I_D

Description

75A

(@T_{C (Bottom)}= 25°C)

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon are. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These features

combine to make this product an extremely efficient and

reliable device for use in Automotive and wide variety of

other applications.

PQFN 5X6 mm

Applications

 Injection

Gate

Drain

Source

 Heavy Loads

 DC-DC Converter

Standard Pack

Base Part Number

Package Type

Complete Part Number

Form

Quantity

AUIRFN7107

PQFN 5mm x 6mm

Tape and Reel

4000

AUIRFN7107TR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

Continuous Drain Current, V_GS@ 10V

75

I_D@ T_C(Bottom)= 100°C

I_DM

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

Power Dissipation

53

300

4.4

Power Dissipation

125

Linear Derating Factor

0.029

± 20

123

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

T_J

T_STG

Operating Junction and

Storage Temperature Range

-55 to + 175

°C

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-10-12

12 3 4 5 6 7...9

中文翻译

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与AUIRFN7107相关器件

型号	品牌	获取价格	描述	数据表
AUIRFN7107TR	INFINEON	获取价格	Advanced Process Technology
AUIRFN7110	INFINEON	获取价格	100V 单个 N 通道 HEXFET Power MOSFET, 采用 PQFN 5 x
AUIRFN8401	INFINEON	获取价格	Advanced Process Technology
AUIRFN8401TR	INFINEON	获取价格	Advanced Process Technology
AUIRFN8403	INFINEON	获取价格	汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 PQ
AUIRFN8403TR	INFINEON	获取价格	MOSFET N-CH 40V 95A 8PQFN
AUIRFN8405	INFINEON	获取价格	Advanced Process Technology
AUIRFN8405TR	INFINEON	获取价格	Advanced Process Technology
AUIRFN8458	INFINEON	获取价格	Advanced Process Technology
AUIRFN8458TR	INFINEON	获取价格	Advanced Process Technology

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