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AUIRFL024NTR PDF预览

AUIRFL024NTR

更新时间： 2024-02-09 05:31:55
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网PC开关光电二极管晶体管
页数 文件大小 规格书
11页 227K
描述
Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

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AUIRFL024NTR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-261AA
包装说明：SMALL OUTLINE, R-PDSO-G4针数：4
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.27其他特性：AVALANCHE RATED, HIGH RELIABILITY
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：4 A
最大漏极电流 (ID)：0.0028 A最大漏源导通电阻：0.075 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-261AA
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.1 W子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICON

AUIRFL024NTR 数据手册

 浏览型号AUIRFL024NTR的Datasheet PDF文件第2页浏览型号AUIRFL024NTR的Datasheet PDF文件第3页浏览型号AUIRFL024NTR的Datasheet PDF文件第4页浏览型号AUIRFL024NTR的Datasheet PDF文件第5页浏览型号AUIRFL024NTR的Datasheet PDF文件第6页浏览型号AUIRFL024NTR的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFL024N  
HEXFET® Power MOSFET  
Features  
D
S
V(BR)DSS  
RDS(on) max.  
ID  
55V  
75m  
• Advanced Planar Technology  
• Low On-Resistance  
• Dynamic dV/dT Rating  
• 150°C Operating Temperature  
• Fast Switching  
Ω
G
2.8A  
• Fully Avalanche Rated  
• Repetitive Avalanche Allowed up to Tjmax  
• Lead-Free, RoHS Compliant  
• Automotive Qualified*  
D
S
D
G
Description  
Specifically designed for Automotive applications, this  
cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined  
with the fast switching speed and ruggedized device  
design that HEXFET power MOSFETs are well known  
for, provides the designer with an extremely efficient  
and reliable device for use in Automotive and a wide  
variety of other applications.  
SOT-223  
AUIRFL024N  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
Tube  
95  
AUIRFL024N  
AUIRFL024N  
SOT-223  
Tape and Reel  
2500  
AUIRFL024NTR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
4.0  
Units  
I
I
I
I
@ TA = 25°C  
@ TA = 25°C  
@ TA = 70°C  
D
D
D
2.8  
2.3  
A
11.2  
2.1  
DM  
P
P
@TA = 25°C Power Dissipation (PCB Mount)  
D
D
W
1.0  
8.3  
Power Dissipation (PCB Mount)  
Linear Derating Factor (PCB Mount)  
Gate-to-Source Voltage  
@TA = 25°C  
mW/°C  
V
± 20  
V
GS  
EAS  
IAR  
214  
2.8  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
0.1  
5.0  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-55 to + 150  
T
T
J
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
90  
Max.  
120  
60  
Units  
RθJA  
RθJA  
Junction-to-Ambient (PCB mount, steady state)  
Junction-to-Ambient (PCB mount, steady state)  
°C/W  
50  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
March 26, 2014  
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AUIRFL024NTR 替代型号

型号 品牌 替代类型 描述 数据表
IRFL024NTRPBF INFINEON

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