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AUIRFB8405

更新时间： 2024-01-26 16:12:30
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 228K
描述
New Ultra Low On-Resistance, Fast Switching

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中文翻译

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AUIRFB8405 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.7配置：Single
最大漏极电流 (Abs) (ID)：120 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高工作温度：175 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：163 W
子类别：FET General Purpose Power表面贴装：NO
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AUIRFB8405 数据手册

 浏览型号AUIRFB8405的Datasheet PDF文件第2页浏览型号AUIRFB8405的Datasheet PDF文件第3页浏览型号AUIRFB8405的Datasheet PDF文件第4页浏览型号AUIRFB8405的Datasheet PDF文件第5页浏览型号AUIRFB8405的Datasheet PDF文件第6页浏览型号AUIRFB8405的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRFB8405  
HEXFET® Power MOSFET  
Features  
Advanced Process Technology  
D
S
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
VDSS  
40V  
Ω
Ω
RDS(on) typ.  
max.  
2.1m  
2.5m  
G
ID  
185A  
(Silicon Limited)  
ID  
120A  
(Package Limited)  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitive avalanche rating. These features combine to make  
this design an extremely efficient and reliable device for use  
inAutomotiveapplicationsandwidevarietyofotherapplications.  
D
S
D
G
TO-220AB  
Applications  
AUIRFB8405  
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
G
Gate  
D
Drain  
S
Source  
DC-DCApplications  
Base part number  
Package Type  
TO-220  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
50  
AUIRFB8405  
Tube  
AUIRFB8405  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
Units  
185  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
131  
A
120  
904  
163  
Pulsed Drain Current  
PD @TC = 25°C  
Maximum Power Dissipation  
W
1.1  
Linear Derating Factor  
W/°C  
V
± 20  
VGS  
TJ  
Gate-to-Source Voltage  
-55 to + 175  
Operating Junction and  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Mounting torque, 6-32 or M3 screw  
300  
10lbf in (1.1N m)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com © 2013 International Rectifier  
April 30, 2013  
1
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