5秒后页面跳转
捷配首页

Datasheet > AUIRFBA1405
AUIRFBA1405 PDF预览

AUIRFBA1405

更新时间： 2023-12-06 20:13:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 211K
描述
汽车 Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 Super 220 封装

阅读下载

中文翻译

获取价格

AUIRFBA1405 数据手册

 浏览型号AUIRFBA1405的Datasheet PDF文件第2页浏览型号AUIRFBA1405的Datasheet PDF文件第3页浏览型号AUIRFBA1405的Datasheet PDF文件第4页浏览型号AUIRFBA1405的Datasheet PDF文件第5页浏览型号AUIRFBA1405的Datasheet PDF文件第6页浏览型号AUIRFBA1405的Datasheet PDF文件第7页 
PD-97768  
AUTOMOTIVE GRADE  
AUIRFBA1405  
HEXFET® Power MOSFET  
Features  
l Advanced Planar Technology  
l Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Repetitive Avalanche Allowed  
up to Tjmax  
D
V(BR)DSS  
55V  
RDS(on) typ.  
max  
ID (Silicon Limited)  
ID (Package Limited)  
4.3m  
5.0m  
174A  
G
95A  
S
l Lead-Free, RoHS Compliant  
l Automotive Qualified*  
D
Description  
Specifically designed for Automotive applications, this  
Stripe Planar design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit com-  
bined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely  
efficient and reliable device for use in Automotive and  
a wide variety of other applications.  
S
D
G
Super-220  
AUIRFBA1405  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
174  
Units  
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
123  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
A
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
95  
I
@ T = 25°C  
C
D
680  
IDM  
330  
2.2  
PD @TC = 25°C Power Dissipation  
Linear Derating Factor  
W
W/°C  
± 20  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
V
mJ  
A
560  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
See Fig.12a, 12b, 15, 16  
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
5.0  
-40 to + 175  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
300 (1.6mm from case )  
Soldering Temperature, for 10 seconds  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.45  
–––  
58  
Units  
R  
R  
R  
Junction-to-Case  
JC  
CS  
JA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
03/15/12  
1234567...12

中文翻译

下载PDF

与AUIRFBA1405相关器件

型号 品牌 获取价格 描述 数据表
AUIRFI3205 INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRFL014N INFINEON

获取价格

 		Power Field-Effect Transistor, 1.9A I(D), 55V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
AUIRFL024N INFINEON

获取价格

 		Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Me
AUIRFL024NTR INFINEON

获取价格

 		Small Signal Field-Effect Transistor, 0.0028A I(D), 55V, 1-Element, N-Channel, Silicon, Me
AUIRFN7107 INFINEON

获取价格

 		Advanced Process Technology
AUIRFN7107TR INFINEON

获取价格

 		Advanced Process Technology
AUIRFN7110 INFINEON

获取价格

 		100V 单个 N 通道 HEXFET Power MOSFET, 采用 PQFN 5 x
AUIRFN8401 INFINEON

获取价格

 		Advanced Process Technology
AUIRFN8401TR INFINEON

获取价格

 		Advanced Process Technology
AUIRFN8403 INFINEON

获取价格

 		汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 PQ

与AUIRFBA1405相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证