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AUIRFB8409

更新时间： 2024-11-18 12:52:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 404K
描述
AUTOMOTIVE GRADE

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中文翻译

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AUIRFB8409 数据手册

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AUIRFB8409  
AUIRFS8409  
AUIRFSL8409  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
D
S
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
VDSS  
40V  
RDS(on) (SMD) typ. 0.97mΩ  
max. 1.2mΩ  
G
ID  
409A  
(Silicon Limited)  
ID  
195A  
(Package Limited)  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitiveavalancherating.Thesefeaturescombinetomake  
this design an extremely efficient and reliable device for use  
in Automotive applications and wide variety of other  
applications.  
D
D
D
S
S
S
D
G
D
G
G
D2Pak  
TO-220AB  
TO-262  
Applications  
AUIRFS8409  
AUIRFB8409  
AUIRFSL8409  
l
l
l
l
l
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
G
Gate  
D
Drain  
S
Source  
DC-DCApplications  
Base part number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Tube  
Tube  
Quantity  
50  
AUIRFB8409  
AUIRFS8409  
AUIRFS8409  
AUIRFSL8409  
TO-220  
D2-Pak  
D2-Pak  
TO-262  
AUIRFB8409  
AUIRFS8409  
AUIRFS8409TRL  
AUIRFSL8409  
50  
800  
50  
Tape and Reel Left  
Tube  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
409  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
289  
A
195  
1524  
375  
2.5  
PD @TC = 25°C  
Maximum Power Dissipation  
W
Linear Derating Factor  
W/°C  
V
± 20  
VGS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)  
EAS  
760  
mJ  
1360  
EAS (tested)  
IAR  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
See Fig. 14, 15, 24a, 24b  
A
Repetitive Avalanche Energy  
EAR  
mJ  
-55 to + 175  
TJ  
Operating Junction and  
°C  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
10lbf in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com © 2013 International Rectifier  
April 30, 2013  
1
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