Datasheet > AUIRFB8409

AUIRFB8409

更新时间： 2024-02-17 16:30:41

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	404K
描述
AUTOMOTIVE GRADE

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中文翻译

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技术参数
数据手册

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AUIRFB8409 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.72	配置：	Single
最大漏极电流 (Abs) (ID)：	195 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	375 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

AUIRFB8409 数据手册

AUIRFB8409

AUIRFS8409

AUIRFSL8409

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

Advanced Process Technology

New Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

V_DSS

40V

R_DS(on)(SMD) typ. 0.97mΩ

max. 1.2mΩ

I_D

409A

(Silicon Limited)

I_D

195A

(Package Limited)

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniquestoachieveextremelylowon-resistancepersilicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitiveavalancherating.Thesefeaturescombinetomake

this design an extremely efficient and reliable device for use

in Automotive applications and wide variety of other

applications.

D²Pak

TO-220AB

TO-262

Applications

AUIRFS8409

AUIRFB8409

AUIRFSL8409

Electric Power Steering (EPS)

Battery Switch

Start/Stop Micro Hybrid

Heavy Loads

Gate

Drain

Source

DC-DCApplications

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tube

Quantity

AUIRFB8409

AUIRFS8409

AUIRFSL8409

TO-220

D2-Pak

TO-262

AUIRFB8409

AUIRFS8409

AUIRFS8409TRL

AUIRFSL8409

800

Tape and Reel Left

Tube

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

409

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

289

195

1524

375

2.5

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

± 20

V_GS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

E_AS

760

1360

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy Tested Value

Avalanche Current

See Fig. 14, 15, 24a, 24b

Repetitive Avalanche Energy

E_AR

-55 to + 175

T_J

Operating Junction and

°C

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

10lbf in (1.1N m)

Mounting torque, 6-32 or M3 screw

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

April 30, 2013

12 3 4 5 6 7...14

中文翻译

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