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AUIRF8736M2

更新时间： 2024-11-08 01:19:27
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英飞凌 - INFINEON /
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12页 494K
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Automotive DirectFET® Power MOSFET

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AUIRF8736M2 数据手册

 浏览型号AUIRF8736M2的Datasheet PDF文件第2页浏览型号AUIRF8736M2的Datasheet PDF文件第3页浏览型号AUIRF8736M2的Datasheet PDF文件第4页浏览型号AUIRF8736M2的Datasheet PDF文件第5页浏览型号AUIRF8736M2的Datasheet PDF文件第6页浏览型号AUIRF8736M2的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRF8736M2TR  
Automotive DirectFET® Power MOSFET  
 Advanced Process Technology  
V(BR)DSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
Qg  
40V  
 Optimized for Automotive Motor Drive, DC-DC and  
1.3m  
1.9m  
137A  
other Heavy Load Applications  
 Exceptionally Small Footprint and Low Profile  
 High Power Density  
 Low Parasitic Parameters  
136nC  
 Dual Sided Cooling  
 175°C Operating Temperature  
 Repetitive Avalanche Allowed up to Tjmax  
 Lead Free, RoHS Compliant and Halogen Free  
 Automotive Qualified *  
DirectFET® ISOMETRIC  
Applicable DirectFET® Outline and Substrate Outline   
M4  
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF8736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging  
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The  
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or  
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®  
package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRF8736M2 to offer substantial system level savings and performance improvement  
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing  
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high  
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current  
automotive applications.  
Base Part Number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
AUIRF8736M2  
DirectFET2 M-CAN  
AUIRF8736M2TR  
Tape and Reel  
4800  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
40  
±20  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TA = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V   
Continuous Drain Current, VGS @ 10V   
Continuous Drain Current, VGS @ 10V   
Pulsed Drain Current   
137  
97  
27  
565  
A
PD @TC = 25°C  
PD @TA = 25°C  
EAS  
Power Dissipation   
Power Dissipation   
Single Pulse Avalanche Energy (Thermally Limited)   
Single Pulse Avalanche Energy   
Avalanche Current   
63  
2.5  
82  
254  
W
mJ  
EAS (Tested)  
A
IAR  
See Fig. 14, 15, 22a, 22b  
EAR  
TP  
Repetitive Avalanche Energy   
Peak Soldering Temperature  
Operating Junction and  
mJ  
°C  
270  
TJ  
TSTG  
-55 to + 175  
Storage Temperature Range  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com © 2014 International Rectifier  
1
Submit Datasheet Feedback  
January 14, 2014  
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