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AUIRF9540N PDF预览

AUIRF9540N

更新时间: 2024-11-19 14:55:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 823K
描述
汽车 Q101-100V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

AUIRF9540N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.79
其他特性:AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级(Eas):430 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):23 A
最大漏极电流 (ID):23 A最大漏源导通电阻:0.117 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):250
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):140 W
最大脉冲漏极电流 (IDM):76 A子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AUIRF9540N 数据手册

 浏览型号AUIRF9540N的Datasheet PDF文件第2页浏览型号AUIRF9540N的Datasheet PDF文件第3页浏览型号AUIRF9540N的Datasheet PDF文件第4页浏览型号AUIRF9540N的Datasheet PDF文件第5页浏览型号AUIRF9540N的Datasheet PDF文件第6页浏览型号AUIRF9540N的Datasheet PDF文件第7页 
PD - 97626  
AUTOMOTIVE GRADE  
AUIRF9540N  
Features  
l AdvancedPlanarTechnology  
l Dynamic dV/dT Rating  
l 175°COperatingTemperature  
l Fast Switching  
l Fully Avalanche Rated  
l Repetitive Avalanche Allowed  
up to Tjmax  
D
V(BR)DSS  
RDS(on) max.  
ID  
-100V  
0.117Ω  
-23A  
G
S
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
D
Description  
S
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
D
G
TO-220AB  
AUIRF9540N  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
-23  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V  
@ T = 25°C  
C
I
I
I
D
D
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
-16  
A
@ T = 100°C  
C
-76  
DM  
140  
0.91  
± 20  
Power Dissipation  
@T = 25°C  
C
W
W/°C  
V
P
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
430  
-11  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
14  
-5.0  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
1.1  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
–––  
62  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
06/07/11  

AUIRF9540N 替代型号

型号 品牌 替代类型 描述 数据表
IRF9540NPBF INFINEON

类似代替

HEXFET㈢ Power MOSFET
IRFP9150 INTERSIL

功能相似

25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

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