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AUIRFB3207

更新时间： 2024-11-07 06:38:47
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英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 284K
描述
HEXFET Power MOSFET

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中文翻译

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AUIRFB3207 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.22
其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：910 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：75 V
最大漏极电流 (Abs) (ID)：75 A最大漏极电流 (ID)：75 A
最大漏源导通电阻：0.0045 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：300 W
最大脉冲漏极电流 (IDM)：720 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFB3207 数据手册

 浏览型号AUIRFB3207的Datasheet PDF文件第2页浏览型号AUIRFB3207的Datasheet PDF文件第3页浏览型号AUIRFB3207的Datasheet PDF文件第4页浏览型号AUIRFB3207的Datasheet PDF文件第5页浏览型号AUIRFB3207的Datasheet PDF文件第6页浏览型号AUIRFB3207的Datasheet PDF文件第7页 
PD - 96322  
AUTOMOTIVE GRADE  
AUIRFB3207  
HEXFET® Power MOSFET  
Features  
V(BR)DSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
D
S
75V  
l
l
l
l
l
l
l
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
3.6m  
4.5m  
170A  
Ω
Ω
G
75A  
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide variety  
of other applications.  
S
D
G
TO-220AB  
AUIRFB3207  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and  
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise  
specified.  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
170  
120  
A
75  
720  
PD @TC = 25°C  
W
300  
Maximum Power Dissipation  
2.0  
Linear Derating Factor  
W/°C  
V
VGS  
EAS  
IAR  
± 20  
910  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
mJ  
A
Avalanche Current  
See Fig. 14, 15, 16a, 16b,  
EAR  
Repetitive Avalanche Energy  
Peak Diode Recovery  
mJ  
5.8  
dV/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
°C  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.50  
–––  
62  
Units  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
0.50  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface , TO-220  
Junction-to-Ambient, TO-220  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/21/10  
1234567...11

中文翻译

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AUIRFB3207 替代型号

型号 品牌 替代类型 描述 数据表
IRFB3207PBF INFINEON

类似代替

 HEXFET㈢Power MOSFET
IRFB3207 INFINEON

功能相似

 HEXFET Power MOSFET

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