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AUIRF9952QTR PDF预览

AUIRF9952QTR

更新时间： 2024-11-18 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 264K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

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AUIRF9952QTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, SOP-8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.2
其他特性：AVALANCHE RATED, HIGH RELIABILITY雪崩能效等级（Eas）：44 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：3.5 A最大漏极电流 (ID)：2.8 A
最大漏源导通电阻：0.1 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：MS-012AAJESD-30 代码：R-PDSO-G8
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：16 A
子类别：Other Transistors表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF9952QTR 数据手册

 浏览型号AUIRF9952QTR的Datasheet PDF文件第2页浏览型号AUIRF9952QTR的Datasheet PDF文件第3页浏览型号AUIRF9952QTR的Datasheet PDF文件第4页浏览型号AUIRF9952QTR的Datasheet PDF文件第5页浏览型号AUIRF9952QTR的Datasheet PDF文件第6页浏览型号AUIRF9952QTR的Datasheet PDF文件第7页 
PD - 97647  
AUTOMOTIVE GRADE AUIRF9952Q  
HEXFET® Power MOSFET  
Features  
l AdvancedPlanarTechnology  
l LowOn-Resistance  
l Dual N and P Channel MOSFET  
l Dynamic dV/dT Rating  
l 150°COperatingTemperature  
l Fast Switching  
l Full Avalanche Rated  
l Repetitive Avalanche Allowed up to  
Tjmax  
N-CHANNEL MOSFET  
N-CH P-CH  
1
2
3
4
8
S1  
D1  
D1  
7
G1  
V(BR)DSS  
RDS(on) max.  
ID  
30V  
0.10  
-30V  
0.25  
6
5
S2  
D2  
D2  
Ω
Ω
G2  
P-CHANNEL MOSFET  
3.5A -2.3A  
Top View  
l Lead-Free,RoHSCompliant  
l AutomotiveQualified*  
Description  
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit com-  
bined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely  
efficient and reliable device for use in Automotive and  
a wide variety of other applications.  
SO-8  
AUIRF9952Q  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
N-Channel  
P-Channel  
-2.3  
10 Sec. Pulsed Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
@ TA = 70°C  
3.5  
2.8  
16  
D
D
A
-1.8  
-10  
DM  
2.0  
Power Dissipation  
P
D
P
D
@TA = 25°C  
@TA = 70°C  
W
1.3  
Power Dissipation  
0.016  
± 20  
Linear Derating Factor  
Gate-to-Source Voltage  
W/°C  
V
V
GS  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
44  
57  
mJ  
A
2.0  
-1.3  
EAR  
dv/dt  
0.25  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
5.0  
-5.0  
T
T
J
-55 to + 150  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJA  
Junction-to-Ambient (PCB Mount, steady state)  
62.5  
°C/W  
–––  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
04/25/11  
1234567...13

中文翻译

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AUIRF9952QTR 替代型号

型号 品牌 替代类型 描述 数据表
IRF9952QTRPBF INFINEON

完全替代

 Advanced Process Technology
IRF7317TRPBF INFINEON

类似代替

 Generation V Technology
IRF7105TRPBF INFINEON

类似代替

 Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel,

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