AUIRF8739L2TR
AUTOMOTIVE GRADE
Automotive DirectFET® Power MOSFET
Advanced Process Technology
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
40V
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
0.35m
0.6m
545A
375nC
S
S
S
S
S
S
D
D
G
S
S
DirectFET2 L-can
Applicable DirectFET® Outline and Substrate Outline
L8
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF8739L2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
Package Type
Standard Pack
Form
Tape and Reel
Orderable Part Number
Quantity
AUIRF8739L2
DirectFET®
AUIRF8739L2TR
4000
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
40
V
ID @ TC = 25°C
ID @ TC = 100°C
545
385
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package limit)
Pulsed Drain Current
ID @ TA = 25°C
ID @ TC = 25°C
57
375
A
IDM
1150
PD @TC = 25°C
340
Power Dissipation
W
PD @TA = 25°C
3.8
Power Dissipation
mJ
EAS
312
1500**
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
EAS (Tested)
IAR
A
See Fig. 14, 15, 22a, 22b
EAR
TP
Repetitive Avalanche Energy
Peak Soldering Temperature
mJ
°C
270
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
© 2015 International Rectifier
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