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AUIRF7732S2TR1

更新时间： 2024-09-18 01:19:27
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英飞凌 - INFINEON /
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DirectFET Power MOSFET

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AUIRF7732S2TR1 数据手册

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AUIRF7732S2TR/TR1  
DirectFET® Power MOSFET ‚  
• Advanced Process Technology  
• Optimized for Automotive DC-DC, Motor Drive and  
other Heavy Load Applications  
• Exceptionally Small Footprint and Low Profile  
• High Power Density  
40V  
5.5mΩ  
6.95mΩ  
55A  
V(BR)DSS  
RDS(on) typ.  
max.  
• Low Parasitic Parameters  
ID (Silicon Limited)  
Qg  
• Dual Sided Cooling  
30nC  
• 175°C Operating Temperature  
• Repetitive Avalanche Capability for Robustness and  
Reliability  
• Lead free, RoHS and Halogen free  
S
D
D
G
S
DirectFET™ ISOMETRIC  
SC  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® pack-  
aging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than  
an SO-8 and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB  
assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding  
the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive  
power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET®  
packaging platform coupled with the latest silicon technology allows the AUIRF7732S2 to offer substantial system level savings and  
performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV  
platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional  
features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to  
make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.  
Ordering Information  
Base Part Number  
Package Type  
Standard Pack  
Form  
Tape and Reel  
Complete part Number  
Quantity  
4800  
1000  
AUIRF7732S2  
AUIRF7732S2  
DirectFET2 Small -Can  
DirectFET2 Small -Can  
AUIRF7732S2TR  
AUIRF7732S2TR1  
Tape and Reel Option 1  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure  
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings  
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
40  
± 20  
Units  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
DS  
V
GS  
55  
39  
14  
220  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
C
@ T = 100°C  
C
@ TA = 25°C  
D
D
D
A
DM  
41  
2.5  
45  
100  
Power Dissipation  
Power Dissipation  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
P
P
@TC = 25°C  
@TA = 25°C  
D
W
D
EAS  
mJ  
EAS (tested)  
See Fig. 18a,18b,16,17  
IAR  
A
EAR  
Repetitive Avalanche Energy  
mJ  
260  
-55 to + 175  
Peak Soldering Temperature  
Operating Junction and  
Storage Temperature Range  
T
T
T
P
°C  
J
STG  
HEXFET® is a registered trademark of International Rectifier.  
1
www.irf.com  
© 2012 International Rectifier  
May 08, 2012  
1234567...12

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