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AUIRF7749L2

更新时间： 2024-09-18 01:22:31
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英飞凌 - INFINEON /
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12页 508K
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Advanced Process Technology

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AUIRF7749L2 数据手册

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AUTOMOTIVE GRADE  
AUIRF7749L2TR  
Automotive DirectFET® Power MOSFET  
60V  
 Advanced Process Technology  
V(BR)DSS  
RDS(on) typ.  
max.  
 Optimized for Automotive Motor Drive, DC-DC and  
1.1m  
1.5m  
345A  
other Heavy Load Applications  
 Exceptionally Small Footprint and Low Profile  
 High Power Density  
ID (Silicon Limited)  
Qg  
 Low Parasitic Parameters  
 Dual Sided Cooling  
183nC  
 175°C Operating Temperature  
 Repetitive Avalanche Allowed up to Tjmax  
 Lead Free, RoHS Compliant and Halogen Free  
 Automotive Qualified *  
S
S
S
S
S
S
D
D
G
S
S
Applicable DirectFET® Outline and Substrate Outline   
DirectFET2 L-can  
L8  
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7749L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology  
to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile. The DirectFET® package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual  
sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement  
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing  
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high  
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current  
automotive applications.  
Standard Pack  
Base Part Number  
AUIRF7749L2  
Package Type  
Orderable Part Number  
Form  
Quantity  
DirectFET®  
AUIRF7749L2TR  
Tape and Reel  
4000  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
60  
Units  
V
VGS  
Gate-to-Source Voltage  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TA = 25°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V   
Continuous Drain Current, VGS @ 10V   
Continuous Drain Current, VGS @ 10V   
Continuous Drain Current, VGS @ 10V (Package limit)   
Pulsed Drain Current   
345  
243  
36  
375  
1380  
341  
3.8  
A
IDM  
PD @TC = 25°C  
PD @TA = 25°C  
Power Dissipation   
Power Dissipation   
W
EAS  
EAS (Tested)  
IAR  
EAR  
TP  
Single Pulse Avalanche Energy (Thermally Limited)   
Single Pulse Avalanche Energy   
Avalanche Current   
Repetitive Avalanche Energy   
Peak Soldering Temperature  
315  
714  
mJ  
A
mJ  
See Fig. 16, 17, 18a, 18b  
270  
°C  
TJ  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2015 International Rectifier  
Submit Datasheet Feedback  
August 10, 2015  
 
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