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AUIRF7738L2TR PDF预览

AUIRF7738L2TR

更新时间： 2024-09-17 19:47:43
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 282K
描述
Power Field-Effect Transistor, 35A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7

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AUIRF7738L2TR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.36其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：538 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：315 A最大漏极电流 (ID)：35 A
最大漏源导通电阻：0.0016 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N7JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：7工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：94 W最大脉冲漏极电流 (IDM)：736 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF7738L2TR 数据手册

 浏览型号AUIRF7738L2TR的Datasheet PDF文件第2页浏览型号AUIRF7738L2TR的Datasheet PDF文件第3页浏览型号AUIRF7738L2TR的Datasheet PDF文件第4页浏览型号AUIRF7738L2TR的Datasheet PDF文件第5页浏览型号AUIRF7738L2TR的Datasheet PDF文件第6页浏览型号AUIRF7738L2TR的Datasheet PDF文件第7页 
PD - 96333A  
AUIRF7738L2TR  
AUIRF7738L2TR1  
AUTOMOTIVE GRADE  
Automotive DirectFET® Power MOSFET ‚  
V(BR)DSS  
40V  
•
•
Advanced Process Technology  
Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
Exceptionally Small Footprint and Low Profile  
High Power Density  
Low Parasitic Parameters  
Dual Sided Cooling  
175°C Operating Temperature  
Repetitive Avalanche Capability for Robustness and  
Reliability  
RDS(on) typ.  
1.2m  
1.6m  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
•
•
•
•
•
•
184A  
129nC  
S
S
S
S
S
S
G
D
D
•
•
Lead Free, RoHS Compliant and Halogen Free  
Automotive Qualified *  
DirectFET® ISOMETRIC  
L6  
Applicable DirectFET® Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7738L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging  
technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.The DirectFET®  
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or  
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.The DirectFET®  
package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRF7738L2 to offer substantial system level savings and performance improvement  
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest  
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction  
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable  
device for high current automotive applications.  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
40  
Parameter  
Units  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
DS  
GS  
V
± 20  
184  
130  
35  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
I
I
I
@ T = 25°C  
C
D
D
D
@ T = 100°C  
C
A
@ TA = 25°C  
ID @ TC = 25°C  
315  
736  
94  
I
DM  
P
P
@TC = 25°C  
@TA = 25°C  
Power Dissipation  
D
D
W
3.3  
Power Dissipation  
EAS  
134  
538  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested)  
IAR  
A
See Fig.18a, 18b, 16, 17  
270  
EAR  
Repetitive Avalanche Energy  
mJ  
Peak Soldering Temperature  
T
T
T
P
°C  
Operating Junction and  
J
-55 to + 175  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
–––  
1.6  
RθJA  
RθJCan  
RθJ-PCB  
–––  
–––  
Junction-to-PCB Mounted  
0.5  
0.63  
Linear Derating Factor  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
11/5/10  
1234567...11

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