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AUIRF7739L2TR PDF预览

AUIRF7739L2TR

更新时间： 2024-11-24 06:38:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
11页 367K
描述
Automotive DirectFET Power MOSFET

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中文翻译

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AUIRF7739L2TR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT PACKAGE-9Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.36Is Samacsys：N
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：160 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：375 A
最大漏极电流 (ID)：46 A最大漏源导通电阻：0.001 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N9
JESD-609代码：e1湿度敏感等级：1
元件数量：1端子数量：9
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：125 W
最大脉冲漏极电流 (IDM)：1070 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF7739L2TR 数据手册

 浏览型号AUIRF7739L2TR的Datasheet PDF文件第2页浏览型号AUIRF7739L2TR的Datasheet PDF文件第3页浏览型号AUIRF7739L2TR的Datasheet PDF文件第4页浏览型号AUIRF7739L2TR的Datasheet PDF文件第5页浏览型号AUIRF7739L2TR的Datasheet PDF文件第6页浏览型号AUIRF7739L2TR的Datasheet PDF文件第7页 
PD - 97442A  
AUIRF7739L2TR  
AUIRF7739L2TR1  
AUTOMOTIVE GRADE  
Automotive DirectFET® Power MOSFET ‚  
• Advanced Process Technology  
• Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
• Exceptionally Small Footprint and Low Profile  
• High Power Density  
V(BR)DSS  
40V  
700µ  
RDS(on) typ.  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
1000µ  
• Low Parasitic Parameters  
270A  
• Dual Sided Cooling  
220nC  
• 175°C Operating Temperature  
• Repetitive Avalanche Capability for Robustness and  
Reliability  
• Lead free, RoHS and Halogen free  
DirectFET™ ISOMETRIC  
L8  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® pack-  
aging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,  
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-  
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET  
packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and  
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-  
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of  
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this  
MOSFET a highly efficient, robust and reliable device for high current automotive applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
40  
V
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
DS  
GS  
± 20  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
270  
I
I
I
@ T = 25°C  
C
D
D
D
190  
A
@ T = 100°C  
C
46  
@ TA = 25°C  
ID @ TC = 25°C  
375  
1070  
I
DM  
125  
Power Dissipation  
P
P
@TC = 25°C  
@TA = 25°C  
D
W
3.8  
Power Dissipation  
D
EAS  
270  
160  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
270  
T
T
T
Peak Soldering Temperature  
P
-55 to + 175  
°C  
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
40  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
–––  
1.2  
RθJA  
RθJCan  
RθJ-PCB  
–––  
–––  
Junction-to-PCB Mounted  
Linear Derating Factor  
0.5  
0.83  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
10/22/2010  
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中文翻译

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