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AUIRF7739L2TR1

更新时间： 2024-11-24 06:38:47
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英飞凌 - INFINEON /
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Automotive DirectFET Power MOSFET

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AUIRF7739L2TR1 数据手册

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PD - 97442A  
AUIRF7739L2TR  
AUIRF7739L2TR1  
AUTOMOTIVE GRADE  
Automotive DirectFET® Power MOSFET ‚  
• Advanced Process Technology  
• Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
• Exceptionally Small Footprint and Low Profile  
• High Power Density  
V(BR)DSS  
40V  
700µ  
RDS(on) typ.  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
1000µ  
• Low Parasitic Parameters  
270A  
• Dual Sided Cooling  
220nC  
• 175°C Operating Temperature  
• Repetitive Avalanche Capability for Robustness and  
Reliability  
• Lead free, RoHS and Halogen free  
DirectFET™ ISOMETRIC  
L8  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7739L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® pack-  
aging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,  
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-  
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET  
packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and  
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-  
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of  
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this  
MOSFET a highly efficient, robust and reliable device for high current automotive applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
40  
V
V
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
DS  
GS  
± 20  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
270  
I
I
I
@ T = 25°C  
C
D
D
D
190  
A
@ T = 100°C  
C
46  
@ TA = 25°C  
ID @ TC = 25°C  
375  
1070  
I
DM  
125  
Power Dissipation  
P
P
@TC = 25°C  
@TA = 25°C  
D
W
3.8  
Power Dissipation  
D
EAS  
270  
160  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
270  
T
T
T
Peak Soldering Temperature  
P
-55 to + 175  
°C  
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
40  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
–––  
1.2  
RθJA  
RθJCan  
RθJ-PCB  
–––  
–––  
Junction-to-PCB Mounted  
Linear Derating Factor  
0.5  
0.83  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
10/22/2010  
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