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AUIRF7759L2TR_15

更新时间： 2024-09-18 01:19:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 446K
描述
Automotive DirectFET Power MOSFET

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AUIRF7759L2TR_15 数据手册

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AUTOMOTIVE GRADE  
AUIRF7759L2TR  
Automotive DirectFET® Power MOSFET  
Advanced Process Technology  
Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
Exceptionally Small Footprint and Low Profile  
High Power Density  
Low Parasitic Parameters  
Dual Sided Cooling  
175°C Operating Temperature  
Repetitive Avalanche Capability for Robustness and Reliability  
Lead free, RoHS and Halogen free  
V(BR)DSS  
75V  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
Qg (typical)  
1.8m  
2.3m  
160A  
200nC  
S
S
S
S
 Automotive Qualified *  
D
G
S
D
S
S
S
DirectFET® ISOMETRIC  
Applicable DirectFET® Outline and Substrate Outline   
L8  
L4  
SB  
SC  
M2  
M4  
L6  
L8  
Description  
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to  
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET® package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual  
sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and performance  
improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET  
utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C  
operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and  
reliable device for high current automotive applications.  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Quantity  
AUIRF7759L2  
DirectFET Large Can  
AUIRF7759L2TR  
Tape and Reel  
4000  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
75  
±20  
160  
113  
26  
375  
640  
125  
63  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TA = 25°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current   
A
PD @TC = 25°C  
PD @TC = 100°C  
PD @TA = 25°C  
Power Dissipation   
Power Dissipation   
W
Power Dissipation   
3.3  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)   
257  
mJ  
A
mJ  
IAR  
EAR  
TP  
Avalanche Current   
See Fig. 16, 17, 18a, 18b  
Repetitive Avalanche Energy   
Peak Soldering Temperature  
Operating Junction and  
270  
°C  
TJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-10-5  
1234567...11

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