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AUIRF7734M2TR

更新时间： 2024-11-24 20:59:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 228K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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AUIRF7734M2TR 数据手册

 浏览型号AUIRF7734M2TR的Datasheet PDF文件第2页浏览型号AUIRF7734M2TR的Datasheet PDF文件第3页浏览型号AUIRF7734M2TR的Datasheet PDF文件第4页浏览型号AUIRF7734M2TR的Datasheet PDF文件第5页浏览型号AUIRF7734M2TR的Datasheet PDF文件第6页浏览型号AUIRF7734M2TR的Datasheet PDF文件第7页 
PD - 96413A  
AUIRF7734M2TR  
AUIRF7734M2TR1  
AUTOMOTIVE GRADE  
Automotive DirectFET® Power MOSFET ‚  
V(BR)DSS  
RDS(on) typ.  
40V  
•
•
Advanced Process Technology  
Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
Exceptionally Small Footprint and Low Profile  
High Power Density  
Low Parasitic Parameters  
Dual Sided Cooling  
175°C Operating Temperature  
Repetitive Avalanche Capability for Robustness and  
Reliability  
3.8m  
4.9m  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
•
•
•
•
•
•
72A  
48nC  
S
•
•
Lead Free, RoHS Compliant and Halogen Free  
Automotive Qualified *  
D
D
S
G
DirectFET®ISOMETRIC  
M2  
L4  
Applicable DirectFET® Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L6  
L8  
Description  
The AUIRF7734M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging  
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The  
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-  
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The  
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRF7734M2 to offer substantial system level savings and performance improve-  
ment specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes  
the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C  
operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust  
and reliable device for high current automotive applications.  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
40  
± 20  
72  
51  
17  
288  
46  
2.5  
56  
Parameter  
Units  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
DS  
GS  
V
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
I
I
I
I
@ T = 25°C  
C
@ T = 100°C  
C
@ TA = 25°C  
D
D
D
A
DM  
Power Dissipation  
Power Dissipation  
P
P
EAS  
@TC = 25°C  
@TA = 25°C  
D
D
W
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested)  
164  
IAR  
EAR  
A
mJ  
See Fig. 18a, 18b, 16, 17  
Repetitive Avalanche Energy  
270  
-55 to + 175  
Peak Soldering Temperature  
Operating Junction and  
Storage Temperature Range  
T
T
T
P
°C  
J
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
–––  
1.0  
Max.  
60  
–––  
–––  
3.3  
Units  
°C/W  
W/°C  
RθJA  
RθJA  
RθJA  
RθJCan  
RθJ-PCB  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
Junction-to-PCB Mounted  
Linear Derating Factor  
–––  
0.30  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
04/19/12  
1234567...11

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