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AUIRF7736M2TR PDF预览

AUIRF7736M2TR

更新时间： 2024-11-24 12:55:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
11页 300K
描述
Automotive DirectFETPower MOSFET

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中文翻译

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AUIRF7736M2TR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：5.32Is Samacsys：N
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：286 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：179 A
最大漏极电流 (ID)：22 A最大漏源导通电阻：0.003 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N5
JESD-609代码：e1湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：63 W
最大脉冲漏极电流 (IDM)：432 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF7736M2TR 数据手册

 浏览型号AUIRF7736M2TR的Datasheet PDF文件第2页浏览型号AUIRF7736M2TR的Datasheet PDF文件第3页浏览型号AUIRF7736M2TR的Datasheet PDF文件第4页浏览型号AUIRF7736M2TR的Datasheet PDF文件第5页浏览型号AUIRF7736M2TR的Datasheet PDF文件第6页浏览型号AUIRF7736M2TR的Datasheet PDF文件第7页 
PD - 96316B  
AUIRF7736M2TR  
AUIRF7736M2TR1  
AUTOMOTIVE GRADE  
Automotive DirectFET® Power MOSFET ‚  
V(BR)DSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
Qg  
•
•
Advanced Process Technology  
Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
Exceptionally Small Footprint and Low Profile  
High Power Density  
Low Parasitic Parameters  
Dual Sided Cooling  
175°C Operating Temperature  
Repetitive Avalanche Capability for Robustness and  
Reliability  
40V  
2.5m  
3.0m  
Ω
Ω
•
•
•
•
•
•
108A  
72nC  
•
•
Lead Free, RoHS Compliant and Halogen Free  
Automotive Qualified *  
DirectFET®ISOMETRIC  
M4  
Applicable DirectFET® Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging  
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The  
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-  
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The  
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRF7736M2 to offer substantial system level savings and performance improvement  
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest  
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction  
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable  
device for high current automotive applications.  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
40  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
DS  
GS  
V
± 20  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
108  
I
I
I
@ T = 25°C  
C
D
D
D
77  
@ T = 100°C  
C
22  
A
@ TA = 25°C  
ID @ TC = 25°C  
179  
432  
I
DM  
63  
P
P
@TC = 25°C  
@TA = 25°C  
Power Dissipation  
D
D
W
2.5  
Power Dissipation  
EAS  
54  
286  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested)  
IAR  
See Fig. 18a,18b,16,17  
A
EAR  
Repetitive Avalanche Energy  
mJ  
270  
Peak Soldering Temperature  
T
T
T
P
-55 to + 175  
°C  
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
60  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
–––  
12.5  
20  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
–––  
2.4  
RθJA  
RθJCan  
RθJ-PCB  
–––  
1.0  
Junction-to-PCB Mounted  
–––  
0.42  
Linear Derating Factor  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
11/08/10  
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中文翻译

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