PD -97552
AUIRF7675M2TR
AUIRF7675M2TR1
DirectFET Power MOSFET
AUTOMOTIVE GRADE
• Advanced Process Technology
V(BR)DSS
150V
47m
56m
1.2
• Optimized for Class D Audio Amplifier Applications
• Low Rds(on) for Improved Efficiency
• Low Qg for Better THD and Improved Efficiency
• Low Qrr for Better THD and Lower EMI
• Low Parasitic Inductance for Reduced Ringing and Lower EMI
• Delivers up to 250W per Channel into 4Ω with No Heatsink
• Dual Sided Cooling
RDS(on) typ.
max.
RG (typical)
Qg (typical)
21nC
• 175°C Operating Temperature
S
• Repetitive Avalanche Capability for Robustness and Reliability
• Lead free, RoHS and Halogen free
G
D
D
S
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline
M2
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Max.
150
± 20
18
Parameter
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
DS
GS
V
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
@ TC = 25°C
D
D
D
13
A
@ TC = 100°C
@ TA = 25°C
4.4
90
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
72
I
DM
45
Power Dissipation
P
P
@TC = 25°C
@TA = 25°C
D
D
W
2.7
59
Power Dissipation
EAS
AS (tested)
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
170
E
IAR
A
See Fig.18a, 18b, 15, 16
EAR
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
mJ
270
T
T
T
P
-55 to + 175
°C
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
60
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
–––
–––
3.3
RθJA
RθJ-Can
RθJ-PCB
–––
1.4
Junction-to-PCB Mounted
–––
0.3
Linear Derating Factor
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
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