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AUIRF7675M2TR1 PDF预览

AUIRF7675M2TR1

更新时间： 2024-11-21 01:19:27
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器脉冲晶体管
页数 文件大小 规格书
11页 298K
描述
DirectFETPower MOSFET

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AUIRF7675M2TR1 数据手册

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PD -97552  
AUIRF7675M2TR  
AUIRF7675M2TR1  
DirectFET™ Power MOSFET ‚  
AUTOMOTIVE GRADE  
• Advanced Process Technology  
V(BR)DSS  
150V  
47m  
56m  
1.2  
• Optimized for Class D Audio Amplifier Applications  
• Low Rds(on) for Improved Efficiency  
• Low Qg for Better THD and Improved Efficiency  
• Low Qrr for Better THD and Lower EMI  
• Low Parasitic Inductance for Reduced Ringing and Lower EMI  
• Delivers up to 250W per Channel into 4Ω with No Heatsink  
• Dual Sided Cooling  
RDS(on) typ.  
max.  
RG (typical)  
Qg (typical)  
21nC  
• 175°C Operating Temperature  
S
• Repetitive Avalanche Capability for Robustness and Reliability  
• Lead free, RoHS and Halogen free  
G
D
D
S
DirectFET™ ISOMETRIC  
Applicable DirectFET Outline and Substrate Outline   
M2  
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET  
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-  
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET  
package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D  
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic  
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the  
voltage ringing that accompanies current transients.  
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.  
Absolute Maximum Ratings  
Max.  
150  
± 20  
18  
Parameter  
Units  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
DS  
GS  
V
(Silicon Limited)  
(Silicon Limited)  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
I
I
I
@ TC = 25°C  
D
D
D
13  
A
@ TC = 100°C  
@ TA = 25°C  
4.4  
90  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
72  
I
DM  
45  
Power Dissipation  
P
P
@TC = 25°C  
@TA = 25°C  
D
D
W
2.7  
59  
Power Dissipation  
EAS  
AS (tested)  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
170  
E
IAR  
A
See Fig.18a, 18b, 15, 16  
EAR  
Repetitive Avalanche Energy  
Peak Soldering Temperature  
Operating Junction and  
mJ  
270  
T
T
T
P
-55 to + 175  
°C  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
60  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
–––  
3.3  
RθJA  
RθJ-Can  
RθJ-PCB  
–––  
1.4  
Junction-to-PCB Mounted  
–––  
0.3  
Linear Derating Factor  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
8/16/10  
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