AUIRF7732S2PbF
AUIRF7732S2TR/TR1
DirectFET® Power MOSFET
• Advanced Process Technology
• Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
40V
5.5mΩ
6.95mΩ
55A
V(BR)DSS
RDS(on) typ.
max.
• Low Parasitic Parameters
ID (Silicon Limited)
Qg
• Dual Sided Cooling
30nC
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS and Halogen free
S
D
D
G
S
DirectFET ISOMETRIC
SC
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® pack-
aging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than
an SO-8 and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB
assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding
the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive
power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7732S2 to offer substantial system level savings and
performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV
platforms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional
features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Ordering Information
Base Part Number
Package Type
Standard Pack
Form
Tape and Reel
Complete part Number
Quantity
4800
1000
AUIRF7732S2
AUIRF7732S2
DirectFET2 Small -Can
DirectFET2 Small -Can
AUIRF7732S2TR
AUIRF7732S2TR1
Tape and Reel Option 1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings
are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
40
± 20
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
V
GS
55
39
14
220
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
I
I
I
I
@ T = 25°C
@ T = 100°C
C
@ TA = 25°C
D
D
A
DM
41
2.5
45
100
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
P
P
@TC = 25°C
@TA = 25°C
D
W
D
EAS
mJ
EAS (tested)
See Fig. 18a,18b,16,17
IAR
A
EAR
Repetitive Avalanche Energy
mJ
260
-55 to + 175
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
T
T
T
°C
HEXFET® is a registered trademark of International Rectifier.
1
www.irf.com
© 2012 International Rectifier
May 08, 2012