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AUIRF7732S2TR PDF预览

AUIRF7732S2TR

更新时间： 2024-11-20 19:59:31
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 419K
描述
Power Field-Effect Transistor, 14A I(D), 40V, 0.00695ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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AUIRF7732S2TR 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：16 weeks风险等级：1.17
雪崩能效等级（Eas）：45 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：55 A最大漏极电流 (ID)：14 A
最大漏源导通电阻：0.00695 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：41 W
最大脉冲漏极电流 (IDM)：220 A参考标准：AEC-Q101
子类别：FET General Purpose Power表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF7732S2TR 数据手册

 浏览型号AUIRF7732S2TR的Datasheet PDF文件第2页浏览型号AUIRF7732S2TR的Datasheet PDF文件第3页浏览型号AUIRF7732S2TR的Datasheet PDF文件第4页浏览型号AUIRF7732S2TR的Datasheet PDF文件第5页浏览型号AUIRF7732S2TR的Datasheet PDF文件第6页浏览型号AUIRF7732S2TR的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRF7732S2TR  
Automotive DirectFET® Power MOSFET   
Advanced Process Technology  
Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
Exceptionally Small Footprint and Low Profile  
High Power Density  
Low Parasitic Parameters  
Dual Sided Cooling  
175°C Operating Temperature  
Repetitive Avalanche Capability for Robustness and Reliability  
Lead free, RoHS and Halogen free  
V(BR)DSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
Qg (typical)  
40V  
5.5m  
6.95m  
55A  
30nC  
S
 Automotive Qualified *  
D
D
G
S
DirectFET® ISOMETRIC  
Applicable DirectFET® Outline and Substrate Outline   
SC  
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to  
achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only  
0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and  
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and  
processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRF7732S2 to offer substantial system level savings and performance improvement  
specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest  
processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction  
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for  
high current automotive applications.  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Quantity  
AUIRF7732S2  
DirectFET Small Can  
AUIRF7732S2TR  
Tape and Reel  
4800  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
40  
±20  
55  
39  
14  
220  
41  
2.5  
45  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TA = 25°C  
IDM  
PD @TC = 25°C  
PD @TA = 25°C  
EAS  
EAS (Tested)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
Pulsed Drain Current   
A
Power Dissipation   
Power Dissipation   
W
Single Pulse Avalanche Energy (Thermally Limited)   
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
100  
A
mJ  
IAR  
See Fig. 16, 17, 18a, 18b  
EAR  
TP  
Repetitive Avalanche Energy   
Peak Soldering Temperature  
270  
°C  
TJ  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-12-14  
1234567...11

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