AUTOMOTIVE GRADE
AUIRF7669L2TR
Automotive DirectFET® Power MOSFET
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg (typical)
100V
3.5m
4.4m
114A
81nC
S
S
S
S
Automotive Qualified *
D
G
S
D
S
S
S
DirectFET® ISOMETRIC
Applicable DirectFET® Outline and Substrate Outline
L8
L4
SB
SC
M2
M4
L6
L8
Description
The AUIRF7669L2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET packaging
platform coupled with the latest silicon technology allows the AUIRF7669L2TR to offer substantial system level savings and performance improvement
specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction
temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for
high current automotive applications..
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
AUIRF7669L2
DirectFET Large Can
AUIRF7669L2TR
Tape and Reel
4000
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
100
±20
114
81
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
19
A
375
460
100
3.3
IDM
PD @TC = 25°C
PD @TA = 25°C
Power Dissipation
Power Dissipation
W
EAS
EAS (tested)
IAR
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Value)
Avalanche Current
260
850
mJ
A
mJ
See Fig. 16, 17, 18a, 18b
EAR
Repetitive Avalanche Energy
TP
Peak Soldering Temperature
260
°C
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-16
5秒后页面跳转
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
贸泽上架Tallysman TW5386智能GNSS天线
SL74HC10N：高性能三输入与非门解析
AIC1781A 电池充电控制器深度解析
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
