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AUIRF7669L2TR1

更新时间： 2024-11-20 08:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
11页 284K
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Automotive DirectFET Power MOSFET

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AUIRF7669L2TR1 数据手册

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PD - 97536  
AUIRF7669L2TR  
AUIRF7669L2TR1  
Automotive DirectFET™ Power MOSFET ‚  
AUTOMOTIVE GRADE  
• Advanced Process Technology  
• Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
• Exceptionally Small Footprint and Low Profile  
• High Power Density  
V(BR)DSS  
100V  
RDS(on) typ.  
3.5m  
4.4m  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
114A  
• Low Parasitic Parameters  
• Dual Sided Cooling  
81nC  
• 175°C Operating Temperature  
• Repetitive Avalanche Capability for Robustness and  
Reliability  
• Lead free, RoHS and Halogen free  
DirectFET™ ISOMETRIC  
L8  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7669L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM  
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,  
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-  
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET  
packaging platform coupled with the latest silicon technology allows the AUIRF7669L2TR(1) to offer substantial system level savings and  
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-  
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of  
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this  
MOSFET a highly efficient, robust and reliable device for high current automotive applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
100  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
V
DS  
GS  
± 20  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
114  
I
I
I
@ T = 25°C  
C
D
D
D
81  
@ T = 100°C  
C
A
19  
@ TA = 25°C  
ID @ TC = 25°C  
375  
460  
I
DM  
100  
Power Dissipation  
P
P
@TC = 25°C  
@TA = 25°C  
D
W
3.3  
Power Dissipation  
D
EAS  
260  
850  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
AS (tested)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
260  
T
T
T
Peak Soldering Temperature  
P
-55 to + 175  
°C  
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
RθJA  
–––  
–––  
1.2  
RθJA  
RθJCan  
RθJ-PCB  
–––  
–––  
Junction-to-PCB Mounted  
Linear Derating Factor  
0.5  
0.83  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
07/13/2010  
1234567...11

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