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AUIRF7478Q

更新时间： 2024-11-20 12:53:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 197K
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AUTOMOTIVE GRADE

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AUIRF7478Q 数据手册

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PD-96423A  
AUTOMOTIVE GRADE  
AUIRF7478Q  
HEXFET® Power MOSFET  
Features  
AdvancedPlanarTechnology  
LowOn-Resistance  
Dynamic dV/dT Rating  
150°COperatingTemperature  
Fast Switching  
A
A
D
V(BR)DSS  
1
8
7
60V  
S
2
S
D
RDS(on) typ.  
20m  
26m  
Ω
Ω
3
6
5
S
D
D
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
max.  
4
G
ID  
7.0A  
Lead-Free,RoHSCompliant  
Automotive Qualified *  
Top View  
Description  
Specifically designed for Automotive applications, this  
Cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined with  
the fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
provides the designer with an extremely efficient and  
reliable device for use in Automotive and a wide variety  
of other applications.  
SO-8  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
60  
Units  
V
Drain-Source Voltage  
V
DS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
7.0  
D
D
A
5.6  
@ TA = 70°C  
56  
DM  
W
W/°C  
V
P
@TA = 25°C  
Power Dissipation  
2.5  
D
Linear Derating Factor  
0.02  
± 20  
140  
4.2  
V
EAS  
IAR  
Gate-to-Source Voltage  
GS  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
dv/dt  
3.7  
V/ns  
Peak Diode Recovery dv/dt  
Operating Junction and  
T
T
J
-55 to + 150  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
STG  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Max.  
20  
Units  
RθJL  
RθJA  
°C/W  
Junction-to-Ambient  
50  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
01/13/12  
1234567...11

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AUIRF7478Q 替代型号

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AUIRF7478QTR INFINEON

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