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AUIRF7647S2TR1

更新时间： 2024-09-17 08:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲放大器
页数 文件大小 规格书
11页 248K
描述
DirectFET Power MOSFET

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AUIRF7647S2TR1 数据手册

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PD - 97537  
AUIRF7647S2TR  
AUIRF7647S2TR1  
DirectFET™ Power MOSFET ‚  
AUTOMOTIVE GRADE  
• Advanced Process Technology  
V(BR)DSS  
100V  
• Optimized for Class D Audio Amplifier Applications  
• Low Rds(on) for Improved Efficiency  
• Low Qg for Better THD and Improved Efficiency  
• Low Qrr for Better THD and Lower EMI  
• Low Parasitic Inductance for Reduced Ringing and Lower EMI  
• Delivers up to 100W per Channel into 8Ω with No Heatsink  
• Dual Sided Cooling  
RDS(on) typ.  
26m  
31m  
Ω
Ω
max.  
RG (typical)  
Qg (typical)  
1.6  
Ω
14nC  
• 175°C Operating Temperature  
S
• Repetitive Avalanche Capability for Robustness and Reliability  
• Lead free, RoHS and Halogen free  
D
D
G
S
DirectFET™ ISOMETRIC  
SC  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7647S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET  
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio  
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance  
and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage  
ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive  
Class D audio amplifier systems.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
100  
Units  
VDS  
VGS  
V
Gate-to-Source Voltage  
± 20  
(Silicon Limited)  
(Silicon Limited)  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
@ TC = 25°C  
24  
17  
D
D
D
I
I
I
@ TC = 100°C  
@ TA = 25°C  
A
5.9  
95  
DM  
Power Dissipation  
P
P
EAS  
@TC = 25°C  
@TA = 25°C  
41  
D
D
W
Power Dissipation  
2.5  
45  
67  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy (Tested Value)  
Avalanche Current  
mJ  
EAS(tested)  
IAR  
A
See Fig. 18a,18b,16,17  
EAR  
Repetitive Avalanche Energy  
mJ  
T
P
270  
Peak Soldering Temperature  
T
J
Operating Junction and  
-55 to + 175  
°C  
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
°C/W  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
12.5  
20  
60  
RθJA  
–––  
–––  
3.7  
RθJA  
RθJ-Can  
RθJ-PCB  
–––  
1.4  
Junction-to-PCB Mounted  
Linear Derating Factor  
–––  
0.27  
W/°C  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
07/13/2010  
1234567...11

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