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AUIRF7648M2TR1

更新时间： 2024-09-17 06:38:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
11页 287K
描述
DirectFET Power MOSFET

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AUIRF7648M2TR1 数据手册

 浏览型号AUIRF7648M2TR1的Datasheet PDF文件第2页浏览型号AUIRF7648M2TR1的Datasheet PDF文件第3页浏览型号AUIRF7648M2TR1的Datasheet PDF文件第4页浏览型号AUIRF7648M2TR1的Datasheet PDF文件第5页浏览型号AUIRF7648M2TR1的Datasheet PDF文件第6页浏览型号AUIRF7648M2TR1的Datasheet PDF文件第7页 
PD - 96317A  
AUIRF7648M2TR  
AUTOMOTIVE GRADE  
AUIRF7648M2TR1  
DirectFET™ Power MOSFET ‚  
V(BR)DSS  
60V  
• Advanced Process Technology  
• Optimized for Automotive Motor Drive, DC-DC and  
other Heavy Load Applications  
• Exceptionally Small Footprint and Low Profile  
• High Power Density  
RDS(on) typ.  
5.5m  
7.0m  
Ω
Ω
max.  
ID (Silicon Limited)  
Qg  
68A  
• Low Parasitic Parameters  
35nC  
• Dual Sided Cooling  
• 175°C Operating Temperature  
• Repetitive Avalanche Capability for Robustness and  
Reliability  
S
S
S
S
G
D
D
• Lead free, RoHS and Halogen free  
DirectFET™ ISOMETRIC  
M4  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7648M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to  
achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,  
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-  
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET  
packaging platform coupled with the latest silicon technology allows theAUIRF7648M2 to offer substantial system level savings and performance  
improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This  
MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this  
MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET  
a highly efficient, robust and reliable device for high current automotive applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
60  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
DS  
GS  
V
± 20  
(Silicon Limited)  
(Silicon Limited)  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
68  
I
I
I
@ T = 25°C  
C
D
D
D
48  
@ T = 100°C  
C
14  
A
@ TA = 25°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
179  
272  
I
DM  
63  
Power Dissipation  
P
P
@TC = 25°C  
@TA = 25°C  
D
W
2.5  
Power Dissipation  
D
EAS  
70  
291  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested)  
IAR  
See Fig. 18a,18b,16,17  
A
EAR  
Repetitive Avalanche Energy  
Peak Soldering Temperature  
Operating Junction and  
mJ  
270  
T
T
T
P
-55 to + 175  
°C  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
60  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
12.5  
20  
RθJA  
–––  
–––  
2.4  
RθJA  
RθJ-Can  
RθJ-PCB  
–––  
1.0  
Junction-to-PCB Mounted  
Linear Derating Factor  
–––  
0.42  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
09/03/10  
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