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AUIRF7484QTR PDF预览

AUIRF7484QTR

更新时间： 2024-09-17 14:47:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 407K
描述
Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

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中文翻译

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AUIRF7484QTR 技术参数

是否Rohs认证：符合生命周期：End Of Life
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.19Is Samacsys：N
配置：Single最大漏极电流 (Abs) (ID)：14 A
FET 技术：METAL-OXIDE SEMICONDUCTOR湿度敏感等级：1
最高工作温度：150 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：2.5 W
子类别：FET General Purpose Power表面贴装：YES
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AUIRF7484QTR 数据手册

 浏览型号AUIRF7484QTR的Datasheet PDF文件第2页浏览型号AUIRF7484QTR的Datasheet PDF文件第3页浏览型号AUIRF7484QTR的Datasheet PDF文件第4页浏览型号AUIRF7484QTR的Datasheet PDF文件第5页浏览型号AUIRF7484QTR的Datasheet PDF文件第6页浏览型号AUIRF7484QTR的Datasheet PDF文件第7页 
AUTOMOTIVE GRADE  
AUIRF7484Q  
HEXFET® Power MOSFET  
40V  
Features  
Advanced Planar Technology  
Low On-Resistance  
150°C Operating Temperature  
Fast Switching  
A
VDSS  
A
1
2
3
4
8
7
S
S
S
G
D
D
RDS(on) max.  
ID  
6
5
D
D
10m  
Fully Avalanche Rated  
Top View  
14A  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
Description  
Specifically designed for Automotive applications, this Stripe  
Planar design of HEXFET® Power MOSFETs utilizes the latest  
processing techniques to achieve low on-resistance per silicon  
area. This benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are  
well known for, provides the designer with an extremely efficient  
and reliable device for use in Automotive and a wide variety of  
other applications.  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tape and Reel  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
4000  
AUIRF7484Q  
SO-8  
AUIRF7484QTR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
ID @ TA = 25°C  
Parameter  
Max.  
14  
Units  
A
Continuous Drain Current  
ID @ TA = 70°C  
IDM  
Continuous Drain Current  
11  
110  
2.5  
Pulsed Drain Current  
PD @TA = 25°C  
Maximum Power Dissipation   
W
Linear Derating Factor  
0.02  
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 8.0  
230  
IAR  
Avalanche Current   
See Fig.19,20, 16b, 16c  
EAR  
TJ  
TSTG  
Repetitive Avalanche Energy   
Operating Junction and  
Storage Temperature Range  
mJ  
-55 to + 150  
°C  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
–––  
Max.  
20  
Units  
RJL  
RJA  
°C/W  
Junction-to-Ambient   
50  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-16  
1234567...11

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AUIRF7484QTR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF7484Q INFINEON

完全替代

 汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 SO

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