AUTOMOTIVE GRADE
AUIRF7647S2TR
Automotive DirectFET® Power MOSFET
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into 8 with No Heatsink
Dual Sided Cooling
V(BR)DSS
RDS(on) typ.
max.
RG (typical)
Qg (typical)
100V
26m
31m
1.6
14nC
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
S
D
D
G
S
Automotive Qualified *
DirectFET® ISOMETRIC
Applicable DirectFET® Outline and Substrate Outline
SC
SB
SC
M2
M4
L4
L6
L8
Description
®
The AUIRF7647S2TR combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging
®
platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
®
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize
thermal transfer in automotive power systems
®
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
®
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that
accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier
systems.
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
AUIRF7647S2
DirectFET Small Can
AUIRF7647S2TR
Tape and Reel
4800
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
100
±20
24
17
5.9
95
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
A
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
41
2.5
45
W
mJ
67
A
mJ
See Fig. 16, 17, 18a, 18b
Repetitive Avalanche Energy
Peak Soldering Temperature
270
°C
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-9-30
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