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AUIRF7647S2TR PDF预览

AUIRF7647S2TR

更新时间： 2024-11-24 08:40:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管脉冲放大器
页数 文件大小 规格书
11页 248K
描述
DirectFET Power MOSFET

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中文翻译

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AUIRF7647S2TR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：1.18
雪崩能效等级（Eas）：67 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：24 A最大漏极电流 (ID)：5.9 A
最大漏源导通电阻：0.031 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：41 W最大脉冲漏极电流 (IDM)：95 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

AUIRF7647S2TR 数据手册

 浏览型号AUIRF7647S2TR的Datasheet PDF文件第2页浏览型号AUIRF7647S2TR的Datasheet PDF文件第3页浏览型号AUIRF7647S2TR的Datasheet PDF文件第4页浏览型号AUIRF7647S2TR的Datasheet PDF文件第5页浏览型号AUIRF7647S2TR的Datasheet PDF文件第6页浏览型号AUIRF7647S2TR的Datasheet PDF文件第7页 
PD - 97537  
AUIRF7647S2TR  
AUIRF7647S2TR1  
DirectFET™ Power MOSFET ‚  
AUTOMOTIVE GRADE  
• Advanced Process Technology  
V(BR)DSS  
100V  
• Optimized for Class D Audio Amplifier Applications  
• Low Rds(on) for Improved Efficiency  
• Low Qg for Better THD and Improved Efficiency  
• Low Qrr for Better THD and Lower EMI  
• Low Parasitic Inductance for Reduced Ringing and Lower EMI  
• Delivers up to 100W per Channel into 8Ω with No Heatsink  
• Dual Sided Cooling  
RDS(on) typ.  
26m  
31m  
Ω
Ω
max.  
RG (typical)  
Qg (typical)  
1.6  
Ω
14nC  
• 175°C Operating Temperature  
S
• Repetitive Avalanche Capability for Robustness and Reliability  
• Lead free, RoHS and Halogen free  
D
D
G
S
DirectFET™ ISOMETRIC  
SC  
Applicable DirectFET Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRF7647S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET  
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio  
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance  
and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage  
ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive  
Class D audio amplifier systems.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
100  
Units  
VDS  
VGS  
V
Gate-to-Source Voltage  
± 20  
(Silicon Limited)  
(Silicon Limited)  
(Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
@ TC = 25°C  
24  
17  
D
D
D
I
I
I
@ TC = 100°C  
@ TA = 25°C  
A
5.9  
95  
DM  
Power Dissipation  
P
P
EAS  
@TC = 25°C  
@TA = 25°C  
41  
D
D
W
Power Dissipation  
2.5  
45  
67  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy (Tested Value)  
Avalanche Current  
mJ  
EAS(tested)  
IAR  
A
See Fig. 18a,18b,16,17  
EAR  
Repetitive Avalanche Energy  
mJ  
T
P
270  
Peak Soldering Temperature  
T
J
Operating Junction and  
-55 to + 175  
°C  
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
°C/W  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
12.5  
20  
60  
RθJA  
–––  
–––  
3.7  
RθJA  
RθJ-Can  
RθJ-PCB  
–––  
1.4  
Junction-to-PCB Mounted  
Linear Derating Factor  
–––  
0.27  
W/°C  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
07/13/2010  
1234567...11

中文翻译

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