Datasheet > AUIRF7484Q

AUIRF7484Q

更新时间： 2024-11-21 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	416K
描述
汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装

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技术参数
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AUIRF7484Q 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.33
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED

AUIRF7484Q 数据手册

AUTOMOTIVE GRADE

AUIRF7484Q

HEXFET^®Power MOSFET

40V

Features

 Advanced Planar Technology

 Low On-Resistance

 150°C Operating Temperature

 Fast Switching

V_DSS

R_DS(on)max.

I_D

10m

 Fully Avalanche Rated

Top View

14A

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

Description

Specifically designed for Automotive applications, this Stripe

Planar design of HEXFET® Power MOSFETs utilizes the latest

processing techniques to achieve low on-resistance per silicon

area. This benefit combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are

well known for, provides the designer with an extremely efficient

and reliable device for use in Automotive and a wide variety of

other applications.

SO-8

AUIRF7484Q

Gate

Drain

Source

Standard Pack

Form

Tape and Reel

Base part number

Package Type

Orderable Part Number

Quantity

4000

AUIRF7484Q

SO-8

AUIRF7484QTR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Symbol

I_D@ T_A= 25°C

Parameter

Max.

Units

Continuous Drain Current

I_D@ T_A= 70°C

I_DM

Continuous Drain Current

110

2.5

Pulsed Drain Current 

P_D@T_A= 25°C

Maximum Power Dissipation 

Linear Derating Factor

0.02

W/°C

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

± 8.0

230

I_AR

Avalanche Current 

See Fig.19,20, 16b, 16c

E_AR

T_J

T_STG

Repetitive Avalanche Energy 

Operating Junction and

Storage Temperature Range

-55 to + 150

°C

Thermal Resistance

Symbol

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_JL

R_JA

°C/W

Junction-to-Ambient 

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

2015-11-16

12 3 4 5 6 7...11

中文翻译

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AUIRF7484Q 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF7484QTR	INFINEON	完全替代	Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

与AUIRF7484Q相关器件

型号	品牌	获取价格	描述	数据表
AUIRF7484QTR	INFINEON	获取价格	Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRF7640S2	INFINEON	获取价格	DirectFETPower MOSFET
AUIRF7640S2TR	INFINEON	获取价格	DirectFET Power MOSFET
AUIRF7640S2TR1	INFINEON	获取价格	DirectFET Power MOSFET
AUIRF7647S2	INFINEON	获取价格	Advanced Process Technology
AUIRF7647S2TR	INFINEON	获取价格	DirectFET Power MOSFET
AUIRF7647S2TR_15	INFINEON	获取价格	Automotive DirectFET Power MOSFET
AUIRF7647S2TR1	INFINEON	获取价格	DirectFET Power MOSFET
AUIRF7648M2	INFINEON	获取价格	Advanced Process Technology
AUIRF7648M2TR	INFINEON	获取价格	DirectFET Power MOSFET

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