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AUIRF7478QTR

更新时间： 2024-11-20 12:53:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号场效应晶体管
页数	文件大小	规格书
11页	197K
描述
AUTOMOTIVE GRADE

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中文翻译

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数据手册
替代型号

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AUIRF7478QTR 数据手册

PD-96423A

AUTOMOTIVE GRADE

AUIRF7478Q

HEXFET^®Power MOSFET

Features

AdvancedPlanarTechnology

LowOn-Resistance

Dynamic dV/dT Rating

150°COperatingTemperature

Fast Switching

V_(BR)DSS

60V

R_DS(on)typ.

20m

26m

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

max.

I_D

7.0A

Lead-Free,RoHSCompliant

Automotive Qualified *

Top View

Description

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in Automotive and a wide variety

of other applications.

SO-8

Gate

Drain

Source

Absolute Maximum Ratings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

Drain-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

7.0

5.6

@ T_A= 70°C

W/°C

@T_A= 25°C

Power Dissipation

2.5

Linear Derating Factor

0.02

± 20

140

4.2

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

dv/dt

3.7

V/ns

Peak Diode Recovery dv/dt

Operating Junction and

-55 to + 150

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

STG

300 (1.6mm from case)

Thermal Resistance

Parameter

Junction-to-Drain Lead

Max.

Units

R_θJL

R_θJA

°C/W

Junction-to-Ambient

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

01/13/12

12 3 4 5 6 7...11

中文翻译

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AUIRF7478QTR 替代型号

型号	品牌	替代类型	描述	数据表
IRF7478QTRPBF	INFINEON	完全替代	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
AUIRF7478Q	INFINEON	完全替代	AUTOMOTIVE GRADE

与AUIRF7478QTR相关器件

型号	品牌	获取价格	描述	数据表
AUIRF7484Q	INFINEON	获取价格	汽车Q101 40V 单个 N 通道 HEXFET Power MOSFET, 采用 SO
AUIRF7484QTR	INFINEON	获取价格	Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRF7640S2	INFINEON	获取价格	DirectFETPower MOSFET
AUIRF7640S2TR	INFINEON	获取价格	DirectFET Power MOSFET
AUIRF7640S2TR1	INFINEON	获取价格	DirectFET Power MOSFET
AUIRF7647S2	INFINEON	获取价格	Advanced Process Technology
AUIRF7647S2TR	INFINEON	获取价格	DirectFET Power MOSFET
AUIRF7647S2TR_15	INFINEON	获取价格	Automotive DirectFET Power MOSFET
AUIRF7647S2TR1	INFINEON	获取价格	DirectFET Power MOSFET
AUIRF7648M2	INFINEON	获取价格	Advanced Process Technology

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