5秒后页面跳转
捷配首页

Datasheet > AUIRF7316Q
AUIRF7316Q PDF预览

AUIRF7316Q

更新时间： 2024-11-07 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
10页 227K
描述
Advanced Planar Technology Low On-Resistance

阅读下载

中文翻译

获取价格

AUIRF7316Q 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：SOP-8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.14
Is Samacsys：N其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：140 mJ配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏源导通电阻：0.058 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MS-012AA
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：30 A
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF7316Q 数据手册

 浏览型号AUIRF7316Q的Datasheet PDF文件第2页浏览型号AUIRF7316Q的Datasheet PDF文件第3页浏览型号AUIRF7316Q的Datasheet PDF文件第4页浏览型号AUIRF7316Q的Datasheet PDF文件第5页浏览型号AUIRF7316Q的Datasheet PDF文件第6页浏览型号AUIRF7316Q的Datasheet PDF文件第7页 
PD - 96365B  
AUIRF7316Q  
HEXFET® Power MOSFET  
Features  
V(BR)DSS  
-30V  
0.042  
1
2
3
4
8
7
l
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
S1  
G1  
D1  
D1  
LowOn-Resistance  
Dual P Channel MOSFET  
SurfaceMount  
Available in Tape & Reel  
150°COperatingTemperature  
Automotive [Q101] Qualified  
Lead-Free,RoHSCompliant  
RDS(on) typ.  
Ω
6
5
S2  
D2  
D2  
max.  
0.058Ω  
G2  
ID  
-4.9A  
Top View  
Description  
Specifically designed for Automotive applications, these  
HEXFET® Power MOSFET's in a Dual SO-8 package  
utilize the lastest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional  
features of these Automotive qualified HEXFET Power  
MOSFET's are a 150°C junction operating temperature,  
fast switching speed and improved repetitive avalanche  
rating. These benefits combine to make this design an  
extremelyefficientandreliabledeviceforuseinAutomotive  
applications and a wide variety of other applications.  
SO-8  
G
D
S
The efficient SO-8 package provides enhanced thermal  
characteristics and dual MOSFET die capability making it  
ideal in a variety of power applications. This dual, surface  
mount SO-8 can dramatically reduce board space and is  
also available in Tape & Reel.  
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
-30  
Units  
V
V
Drain-Source Voltage  
DS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
-4.9  
-3.9  
-30  
I
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
A
DM  
S
-2.5  
2.0  
Continuous Source Current (Diode Conduction)  
Power Dissipation  
P
P
V
EAS  
IAR  
@TA = 25°C  
@TA = 70°C  
D
D
W
Power Dissipation  
1.3  
Gate-to-Source Voltage  
± 20  
140  
-2.8  
0.20  
-5.0  
V
mJ  
A
GS  
Single Pulse Avalanche Energy  
Avalanche Current  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
T
T
J
-55 to + 150  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Max.  
Units  
RθJA  
Junction-to-Ambient  
62.5  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/24/11  
1234567...10

中文翻译

下载PDF

AUIRF7316Q 替代型号

型号 品牌 替代类型 描述 数据表
IRF7316QPBF INFINEON

完全替代

 HEXFET Power MOSFET
IRF7316TRPBF INFINEON

类似代替

 Generation V Technology

与AUIRF7316Q相关器件

型号 品牌 获取价格 描述 数据表
AUIRF7316QTR INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance
AUIRF7319Q INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRF7319QTR INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRF7341Q INFINEON

获取价格

 		Advanced Planar Technology Ultra Low On-Resistance
AUIRF7341QTR INFINEON

获取价格

 		Advanced Planar Technology Ultra Low On-Resistance
AUIRF7342Q INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance
AUIRF7342QTR INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance
AUIRF7343Q INFINEON

获取价格

 		Advanced Planar Technology Ultra Low On-Resistance
AUIRF7343QTR INFINEON

获取价格

 		Advanced Planar Technology Ultra Low On-Resistance
AUIRF7379Q INFINEON

获取价格

 		Advanced Planar Technology Low On-Resistance

与AUIRF7316Q相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证