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AUIRF7316Q

更新时间： 2024-11-09 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
10页 227K
描述
Advanced Planar Technology Low On-Resistance

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中文翻译

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AUIRF7316Q 技术参数

是否Rohs认证：符合生命周期：Active
包装说明：SOP-8Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.14
Is Samacsys：N其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：140 mJ配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏源导通电阻：0.058 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：MS-012AA
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：30 A
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF7316Q 数据手册

 浏览型号AUIRF7316Q的Datasheet PDF文件第2页浏览型号AUIRF7316Q的Datasheet PDF文件第3页浏览型号AUIRF7316Q的Datasheet PDF文件第4页浏览型号AUIRF7316Q的Datasheet PDF文件第5页浏览型号AUIRF7316Q的Datasheet PDF文件第6页浏览型号AUIRF7316Q的Datasheet PDF文件第7页 
PD - 96365B  
AUIRF7316Q  
HEXFET® Power MOSFET  
Features  
V(BR)DSS  
-30V  
0.042  
1
2
3
4
8
7
l
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
S1  
G1  
D1  
D1  
LowOn-Resistance  
Dual P Channel MOSFET  
SurfaceMount  
Available in Tape & Reel  
150°COperatingTemperature  
Automotive [Q101] Qualified  
Lead-Free,RoHSCompliant  
RDS(on) typ.  
Ω
6
5
S2  
D2  
D2  
max.  
0.058Ω  
G2  
ID  
-4.9A  
Top View  
Description  
Specifically designed for Automotive applications, these  
HEXFET® Power MOSFET's in a Dual SO-8 package  
utilize the lastest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional  
features of these Automotive qualified HEXFET Power  
MOSFET's are a 150°C junction operating temperature,  
fast switching speed and improved repetitive avalanche  
rating. These benefits combine to make this design an  
extremelyefficientandreliabledeviceforuseinAutomotive  
applications and a wide variety of other applications.  
SO-8  
G
D
S
The efficient SO-8 package provides enhanced thermal  
characteristics and dual MOSFET die capability making it  
ideal in a variety of power applications. This dual, surface  
mount SO-8 can dramatically reduce board space and is  
also available in Tape & Reel.  
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated  
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still  
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
-30  
Units  
V
V
Drain-Source Voltage  
DS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
-4.9  
-3.9  
-30  
I
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
A
DM  
S
-2.5  
2.0  
Continuous Source Current (Diode Conduction)  
Power Dissipation  
P
P
V
EAS  
IAR  
@TA = 25°C  
@TA = 70°C  
D
D
W
Power Dissipation  
1.3  
Gate-to-Source Voltage  
± 20  
140  
-2.8  
0.20  
-5.0  
V
mJ  
A
GS  
Single Pulse Avalanche Energy  
Avalanche Current  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
T
T
J
-55 to + 150  
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Max.  
Units  
RθJA  
Junction-to-Ambient  
62.5  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/24/11  
1234567...10

中文翻译

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AUIRF7316Q 替代型号

型号 品牌 替代类型 描述 数据表
IRF7316QPBF INFINEON

完全替代

 HEXFET Power MOSFET
IRF7316TRPBF INFINEON

类似代替

 Generation V Technology

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